Erratum: Switching characterization and failure analysis of In 2Se 3 based phase change memory" (Japanese Journal of Applied Physics (2005) 44 (4759))

Heon Lee; Dae Hwan Kang

doi:10.1143/JJAP.51.089201

Erratum: Switching characterization and failure analysis of In ₂Se ₃ based phase change memory" (Japanese Journal of Applied Physics (2005) 44 (4759))

Heon Lee, Dae Hwan Kang

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	089201
Journal	Japanese journal of applied physics
Volume	51
Issue number	8 PART 1
DOIs	https://doi.org/10.1143/JJAP.51.089201
Publication status	Published - 2012 Aug

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.51.089201

Cite this

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journal = "Japanese journal of applied physics",

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AU - Kang, Dae Hwan

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SN - 0021-4922

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JO - Japanese journal of applied physics

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IS - 8 PART 1

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ER -

Erratum: Switching characterization and failure analysis of In 2Se 3 based phase change memory" (Japanese Journal of Applied Physics (2005) 44 (4759))

ASJC Scopus subject areas

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Erratum: Switching characterization and failure analysis of In ₂Se ₃ based phase change memory" (Japanese Journal of Applied Physics (2005) 44 (4759))