Er3+ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

Jeong Sook Ha; Young Rae Jang; Keon Ho Yoo; Chang Hyun Bae; Sang Hwan Nam; Ji Seon Jeon; Seung Min Park

doi:10.1143/JJAP.43.1541

Er³⁺ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

Jeong Sook Ha, Young Rae Jang, Keon Ho Yoo, Chang Hyun Bae, Sang Hwan Nam, Ji Seon Jeon, Seung Min Park

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiO_x, and SiO₂) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er³⁺ ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.

Original language	English
Pages (from-to)	1541-1544
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.43.1541
Publication status	Published - 2004 Apr

Keywords

1.54μm photoluminescence
Er-doped silicon
Pulsed laser deposition

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.43.1541

Cite this

Ha, J. S., Jang, Y. R., Yoo, K. H., Bae, C. H., Nam, S. H., Jeon, J. S., & Park, S. M. (2004). Er³⁺ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(4 A), 1541-1544. https://doi.org/10.1143/JJAP.43.1541

Er³⁺ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere. / Ha, Jeong Sook; Jang, Young Rae; Yoo, Keon Ho et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 A, 04.2004, p. 1541-1544.

Research output: Contribution to journal › Article › peer-review

Ha, JS, Jang, YR, Yoo, KH, Bae, CH, Nam, SH, Jeon, JS & Park, SM 2004, 'Er³⁺ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 43, no. 4 A, pp. 1541-1544. https://doi.org/10.1143/JJAP.43.1541

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