TY - GEN
T1 - ESD protection circuit with an improved ESD capability for input or output circuit protection
AU - Jung, Min Chul
AU - Hawng, Sang Joon
AU - Sung, Man Young
AU - Kang, Ey Goo
PY - 2005
Y1 - 2005
N2 - An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated stages for input or output protection. The ESD protection circuits for input pad and output pad were implemented from the proposed ESD protection circuit. The realized protection circuits for input pad and output pad have been simulated by HSPICE and approved the improved ESD capability.
AB - An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated stages for input or output protection. The ESD protection circuits for input pad and output pad were implemented from the proposed ESD protection circuit. The realized protection circuits for input pad and output pad have been simulated by HSPICE and approved the improved ESD capability.
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U2 - 10.1109/MWSCAS.2005.1594139
DO - 10.1109/MWSCAS.2005.1594139
M3 - Conference contribution
AN - SCOPUS:33847133520
SN - 0780391977
SN - 9780780391970
T3 - Midwest Symposium on Circuits and Systems
SP - 468
EP - 471
BT - 2005 IEEE International 48th Midwest Symposium on Circuits and Systems, MWSCAS 2005
T2 - 2005 IEEE International 48th Midwest Symposium on Circuits and Systems, MWSCAS 2005
Y2 - 7 August 2005 through 10 August 2005
ER -