Abstract
In the quest of promising Indium free amorphous transparent conducting oxide (TCO), Zn-doped SnO2/Ag/Zn-doped SnO2 (OMO) multilayer films were prepared on flexible polyethylene terephthalate (PET) substrates by RF sputtering at room temperature (RT). Growth parameters were optimized by varying sputtering power and working pressure, to have high electrical conductivity and optical transmittance. Optimization of the thickness of each layer was done by Essential Macleod Program (EMP) simulation to get the higher transmission through OMO multilayer. The sheet resistance and transmittance of 3 at% Zn-doped SnO2 thin film (30 nm) were 2.23 kΩ/□, (ρ ~ 8.92×10−3 Ω∙cm) and 81.3% (at λ ~ 550 nm), respectively. By using optimized thicknesses of Zn-doped SnO2 (30 nm) and Ag (12 nm) and optimized growth condition Zn-doped SnO2/Ag/Zn-doped SnO2 multilayer thin films were deposited. The low sheet resistance of 7.2 Ω/□ and high optical transmittance of 85.1% in the 550 nm wavelength region was achieved with 72 nm multilayer film.
Original language | English |
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Pages (from-to) | 7216-7221 |
Number of pages | 6 |
Journal | Ceramics International |
Volume | 43 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2017 Jun 15 |
Keywords
- OMO multilayer
- Optical and electrical properties
- SnO
- TCO
- Zn-doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry