Abstract
Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.
Original language | English |
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Article number | 026004 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 10 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2021 Feb |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials