Estimations of activation energy for dislocation mobility in p-GaN

V. I. Orlov, A. Y. Polyakov, P. S. Vergeles, E. B. Yakimov, Gyu Cheol Kim, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

Original languageEnglish
Article number026004
JournalECS Journal of Solid State Science and Technology
Issue number2
Publication statusPublished - 2021 Feb

Bibliographical note

Publisher Copyright:
© 2021 The Electrochemical Society (“ECS”).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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