Estimations of activation energy for dislocation mobility in p-GaN

V. I. Orlov; A. Y. Polyakov; P. S. Vergeles; E. B. Yakimov; Gyu Cheol Kim; In Hwan Lee

doi:10.1149/2162-8777/abe4e9

Estimations of activation energy for dislocation mobility in p-GaN

V. I. Orlov, A. Y. Polyakov, P. S. Vergeles, E. B. Yakimov, Gyu Cheol Kim, In Hwan Lee

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Abstract

Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

Original language	English
Article number	026004
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	2
DOIs	https://doi.org/10.1149/2162-8777/abe4e9
Publication status	Published - 2021 Feb

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Electronic, Optical and Magnetic Materials

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@article{ceb9ee88ad7c474593642ff2f95cdc63,

title = "Estimations of activation energy for dislocation mobility in p-GaN",

abstract = "Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.",

author = "Orlov, {V. I.} and Polyakov, {A. Y.} and Vergeles, {P. S.} and Yakimov, {E. B.} and Kim, {Gyu Cheol} and Lee, {In Hwan}",

note = "Publisher Copyright: {\textcopyright} 2021 The Electrochemical Society (“ECS”).",

year = "2021",

month = feb,

doi = "10.1149/2162-8777/abe4e9",

language = "English",

volume = "10",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Estimations of activation energy for dislocation mobility in p-GaN

AU - Orlov, V. I.

AU - Polyakov, A. Y.

AU - Vergeles, P. S.

AU - Yakimov, E. B.

AU - Kim, Gyu Cheol

AU - Lee, In Hwan

PY - 2021/2

Y1 - 2021/2

N2 - Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

AB - Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

UR - http://www.scopus.com/inward/record.url?scp=85102580875&partnerID=8YFLogxK

U2 - 10.1149/2162-8777/abe4e9

DO - 10.1149/2162-8777/abe4e9

M3 - Article

AN - SCOPUS:85102580875

SN - 2162-8769

VL - 10

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

M1 - 026004

ER -

Estimations of activation energy for dislocation mobility in p-GaN

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