Estimations of activation energy for dislocation mobility in p-GaN

V. I. Orlov; A. Y. Polyakov; P. S. Vergeles; E. B. Yakimov; Gyu Cheol Kim; In Hwan Lee

doi:10.1149/2162-8777/abe4e9

Estimations of activation energy for dislocation mobility in p-GaN

V. I. Orlov, A. Y. Polyakov, P. S. Vergeles, E. B. Yakimov, Gyu Cheol Kim, In Hwan Lee

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2 Citations (Scopus)

Abstract

Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

Original language	English
Article number	026004
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	2
DOIs	https://doi.org/10.1149/2162-8777/abe4e9
Publication status	Published - 2021 Feb

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Publisher Copyright:
© 2021 The Electrochemical Society (“ECS”).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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title = "Estimations of activation energy for dislocation mobility in p-GaN",

abstract = "Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.",

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T1 - Estimations of activation energy for dislocation mobility in p-GaN

AU - Orlov, V. I.

AU - Polyakov, A. Y.

AU - Vergeles, P. S.

AU - Yakimov, E. B.

AU - Kim, Gyu Cheol

AU - Lee, In Hwan

PY - 2021/2

Y1 - 2021/2

N2 - Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

AB - Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.

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DO - 10.1149/2162-8777/abe4e9

M3 - Article

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SN - 2162-8769

VL - 10

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

M1 - 026004

ER -

Estimations of activation energy for dislocation mobility in p-GaN

Abstract

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