Etching characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6 electron cyclotron resonance plasma

Kwang Ho Kwon; Seung Youl Kang; Sang Kyun Lee; Sung Ihl Kim; Nam Kwan Hong; Sahn Nahm; Young Sik Kim

doi:10.1149/1.1469032

Etching characteristics of Ba(Mg_1/3Ta_2/3)O₃ film by using Cl₂/SF₆ electron cyclotron resonance plasma

Kwang Ho Kwon, Seung Youl Kang, Sang Kyun Lee, Sung Ihl Kim, Nam Kwan Hong, Sahn Nahm, Young Sik Kim

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigated the etch characteristics of Ba(Mg_1/3Ta_2/3)O₃ (BMT) films using Cl₂/SF₆ gas mixtures with electron cyclotron resonance plasma. The etch rate in pure Cl₂ gas plasma was approximately 1250 Å/min and was decreased by the addition of SF₆. By quadrupole mass spectrometer analysis, we found that the etch rate had a close relationship to the Cl radical. The surface reaction on the BMT films during the etch was examined by X-ray photoelectron spectroscopy analysis. It is proposed that the BaCl_xO_y compound has been formed by Cl₂ gas plasma. The chemical surface reaction and BMT etch characteristics with SF₆/Cl₂ gas chemistries are discussed in detail.

Original language	English
Pages (from-to)	C280-C283
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	5
DOIs	https://doi.org/10.1149/1.1469032
Publication status	Published - 2002 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1469032

Cite this

@article{9ef2d20b41454990837cfc95b09f0c51,

title = "Etching characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6 electron cyclotron resonance plasma",

abstract = "We investigated the etch characteristics of Ba(Mg1/3Ta2/3)O3 (BMT) films using Cl2/SF6 gas mixtures with electron cyclotron resonance plasma. The etch rate in pure Cl2 gas plasma was approximately 1250 {\AA}/min and was decreased by the addition of SF6. By quadrupole mass spectrometer analysis, we found that the etch rate had a close relationship to the Cl radical. The surface reaction on the BMT films during the etch was examined by X-ray photoelectron spectroscopy analysis. It is proposed that the BaClxOy compound has been formed by Cl2 gas plasma. The chemical surface reaction and BMT etch characteristics with SF6/Cl2 gas chemistries are discussed in detail.",

author = "Kwon, {Kwang Ho} and Kang, {Seung Youl} and Lee, {Sang Kyun} and Kim, {Sung Ihl} and Hong, {Nam Kwan} and Sahn Nahm and Kim, {Young Sik}",

year = "2002",

month = may,

doi = "10.1149/1.1469032",

language = "English",

volume = "149",

pages = "C280--C283",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "5",

}

TY - JOUR

T1 - Etching characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6 electron cyclotron resonance plasma

AU - Kwon, Kwang Ho

AU - Kang, Seung Youl

AU - Lee, Sang Kyun

AU - Kim, Sung Ihl

AU - Hong, Nam Kwan

AU - Nahm, Sahn

AU - Kim, Young Sik

PY - 2002/5

Y1 - 2002/5

N2 - We investigated the etch characteristics of Ba(Mg1/3Ta2/3)O3 (BMT) films using Cl2/SF6 gas mixtures with electron cyclotron resonance plasma. The etch rate in pure Cl2 gas plasma was approximately 1250 Å/min and was decreased by the addition of SF6. By quadrupole mass spectrometer analysis, we found that the etch rate had a close relationship to the Cl radical. The surface reaction on the BMT films during the etch was examined by X-ray photoelectron spectroscopy analysis. It is proposed that the BaClxOy compound has been formed by Cl2 gas plasma. The chemical surface reaction and BMT etch characteristics with SF6/Cl2 gas chemistries are discussed in detail.

AB - We investigated the etch characteristics of Ba(Mg1/3Ta2/3)O3 (BMT) films using Cl2/SF6 gas mixtures with electron cyclotron resonance plasma. The etch rate in pure Cl2 gas plasma was approximately 1250 Å/min and was decreased by the addition of SF6. By quadrupole mass spectrometer analysis, we found that the etch rate had a close relationship to the Cl radical. The surface reaction on the BMT films during the etch was examined by X-ray photoelectron spectroscopy analysis. It is proposed that the BaClxOy compound has been formed by Cl2 gas plasma. The chemical surface reaction and BMT etch characteristics with SF6/Cl2 gas chemistries are discussed in detail.

UR - http://www.scopus.com/inward/record.url?scp=0036572050&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036572050&partnerID=8YFLogxK

U2 - 10.1149/1.1469032

DO - 10.1149/1.1469032

M3 - Article

AN - SCOPUS:0036572050

SN - 0013-4651

VL - 149

SP - C280-C283

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 5

ER -