Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT

Andreas D. Stricker; Gregory Freeman; Marwan Khater; Jae Sung Rieh

doi:10.1016/j.mssp.2004.09.087

Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT

Andreas D. Stricker, Gregory Freeman, Marwan Khater, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while minimizing the parasitic collector-base capacitance (C_cb). TCAD simulations were used to provide insight into a 300 GHz HBT's current flow lines and to derive design guidelines for the optimal mask width of the SIC implant. This boosted the HBT's transit frequency (f_t) by 6.5% and the unity power gain (f_max) by 23%.

Original language	English
Pages (from-to)	295-299
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.087
Publication status	Published - 2005 Feb
Externally published	Yes

Keywords

Current distribution
Depletion zone
Device simulation
HBT
Hetero bipolar junction transistor
Implant optimization
Process simulation
SIC
Selectively implanted collector
SiGe
Silicon-germanium
TCAD

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2004.09.087

Cite this

@article{4c286e584a9b494a92a590c0f2b062f7,

title = "Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT",

abstract = "An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while minimizing the parasitic collector-base capacitance (Ccb). TCAD simulations were used to provide insight into a 300 GHz HBT's current flow lines and to derive design guidelines for the optimal mask width of the SIC implant. This boosted the HBT's transit frequency (ft) by 6.5% and the unity power gain (fmax) by 23%.",

keywords = "Current distribution, Depletion zone, Device simulation, HBT, Hetero bipolar junction transistor, Implant optimization, Process simulation, SIC, Selectively implanted collector, SiGe, Silicon-germanium, TCAD",

author = "Stricker, {Andreas D.} and Gregory Freeman and Marwan Khater and Rieh, {Jae Sung}",

year = "2005",

month = feb,

doi = "10.1016/j.mssp.2004.09.087",

language = "English",

volume = "8",

pages = "295--299",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "1-3 SPEC. ISS.",

}

TY - JOUR

T1 - Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT

AU - Stricker, Andreas D.

AU - Freeman, Gregory

AU - Khater, Marwan

AU - Rieh, Jae Sung

PY - 2005/2

Y1 - 2005/2

N2 - An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while minimizing the parasitic collector-base capacitance (Ccb). TCAD simulations were used to provide insight into a 300 GHz HBT's current flow lines and to derive design guidelines for the optimal mask width of the SIC implant. This boosted the HBT's transit frequency (ft) by 6.5% and the unity power gain (fmax) by 23%.

AB - An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while minimizing the parasitic collector-base capacitance (Ccb). TCAD simulations were used to provide insight into a 300 GHz HBT's current flow lines and to derive design guidelines for the optimal mask width of the SIC implant. This boosted the HBT's transit frequency (ft) by 6.5% and the unity power gain (fmax) by 23%.

KW - Current distribution

KW - Depletion zone

KW - Device simulation

KW - HBT

KW - Hetero bipolar junction transistor

KW - Implant optimization

KW - Process simulation

KW - SIC

KW - Selectively implanted collector

KW - SiGe

KW - Silicon-germanium

KW - TCAD

UR - http://www.scopus.com/inward/record.url?scp=13244291691&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13244291691&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2004.09.087

DO - 10.1016/j.mssp.2004.09.087

M3 - Article

AN - SCOPUS:13244291691

SN - 1369-8001

VL - 8

SP - 295

EP - 299

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3 SPEC. ISS.

ER -

Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT

Abstract

Keywords

ASJC Scopus subject areas

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