Evaluation of Zn{N[Si(CH3)3]2}2 as a p-type dopant in OMVPE growth of ZnSe

W. S. Rees; D. M. Green; T. J. Anderson; E. Bretschneider; B. Pathangey; C. Park; J. Kim

doi:10.1007/BF02660467

Evaluation of Zn{N[Si(CH₃)₃]₂}₂ as a p-type dopant in OMVPE growth of ZnSe

W. S. Rees, D. M. Green, T. J. Anderson, E. Bretschneider, B. Pathangey, C. Park, J. Kim

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We have grown nominally undoped ZnSe on GaAs from the precursors H₂Se and Et₂Zn. Replacement of Et₂Zn by Zn[N(TMS)₂]₂ produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et₂Zn is utilized as the main zinc source with Zn[N(TMS)₂]₂ being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.

Original language	English
Pages (from-to)	361-366
Number of pages	6
Journal	Journal of Electronic Materials
Volume	21
Issue number	3
DOIs	https://doi.org/10.1007/BF02660467
Publication status	Published - 1992 Mar
Externally published	Yes

Keywords

OMVPE
Raman spectroscopy
ZnSe
nitrogen doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/BF02660467

Cite this

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title = "Evaluation of Zn{N[Si(CH3)3]2}2 as a p-type dopant in OMVPE growth of ZnSe",

abstract = "We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.",

keywords = "OMVPE, Raman spectroscopy, ZnSe, nitrogen doping",

author = "Rees, {W. S.} and Green, {D. M.} and Anderson, {T. J.} and E. Bretschneider and B. Pathangey and C. Park and J. Kim",

year = "1992",

month = mar,

doi = "10.1007/BF02660467",

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volume = "21",

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T1 - Evaluation of Zn{N[Si(CH3)3]2}2 as a p-type dopant in OMVPE growth of ZnSe

AU - Rees, W. S.

AU - Green, D. M.

AU - Anderson, T. J.

AU - Bretschneider, E.

AU - Pathangey, B.

AU - Park, C.

AU - Kim, J.

PY - 1992/3

Y1 - 1992/3

N2 - We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.

AB - We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.

KW - OMVPE

KW - Raman spectroscopy

KW - ZnSe

KW - nitrogen doping

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