TY - JOUR
T1 - Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures
AU - Srivastava, Pawan Kumar
AU - Hassan, Yasir
AU - Ahn, Hyobin
AU - Kang, Byunggil
AU - Jung, Soon Gil
AU - Gebredingle, Yisehak
AU - Joe, Minwoong
AU - Abbas, Muhammad Sabbtain
AU - Park, Tuson
AU - Park, Je Geun
AU - Lee, Kyoung Jin
AU - Lee, Changgu
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) (NRF-2016K1A1A2912707, 2016R1A2B4012931, 2016R1A6A3A11934734 2018R1D1A1B07049669, and 2020R1A2C2014687), the Institute for Basic Science (IBS) in Korea (IBS-R009-G1), the KISTI grant (KSC-2018-CRE-0119) the Global Frontier Research Center for Advanced Soft Electronics (CASE-2013M3A6A5073173), Samsung Research Funding Center of Samsung Electronics (project no. SRFC-MA1802-01), and an Institute for Information & Communications Technology Promotion (IITP) grant (B0117-16-1003) funded by the Ministry of Science and ICT of Korea. Authors acknowledge Korea Advanced Nano fabrication Center, Suwon, for help with TEM measurements on FM/AFM heterostructures. The authors acknowledge Dr. Budhi Singh IUAC, New Delhi, India, for useful discussions during the initial phase of the project.
Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) (NRF-2016K1A1A2912707, 2016R1A2B4012931, 2016R1A6A3A11934734, 2018R1D1A1B07049669, and 2020R1A2C2014687), the Institute for Basic Science (IBS) in Korea (IBS-R009-G1), the KISTI grant (KSC-2018-CRE-0119), the Global Frontier Research Center for Advanced Soft Electronics (CASE-2013M3A6A5073173), Samsung Research Funding Center of Samsung Electronics (project no. SRFC-MA1802-01), and an Institute for Information & Communications Technology Promotion (IITP) grant (B0117-16-1003) funded by the Ministry of Science and ICT of Korea. Authors acknowledge Korea Advanced Nano fabrication Center, Suwon, for help with TEM measurements on FM/AFM heterostructures. The authors acknowledge Dr. Budhi Singh, IUAC, New Delhi, India, for useful discussions during the initial phase of the project.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/5/13
Y1 - 2020/5/13
N2 - The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.
AB - The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.
KW - FM/AFM heterostructures
KW - electric field effect
KW - exchange bias effect
KW - magnetic anisotropy
KW - magnetic ordering
KW - van der Waals magnets
UR - http://www.scopus.com/inward/record.url?scp=85084694406&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.0c01176
DO - 10.1021/acs.nanolett.0c01176
M3 - Article
C2 - 32330042
AN - SCOPUS:85084694406
SN - 1530-6984
VL - 20
SP - 3978
EP - 3985
JO - Nano Letters
JF - Nano Letters
IS - 5
ER -