Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures

Pawan Kumar Srivastava, Yasir Hassan, Hyobin Ahn, Byunggil Kang, Soon Gil Jung, Yisehak Gebredingle, Minwoong Joe, Muhammad Sabbtain Abbas, Tuson Park, Je Geun Park, Kyoung Jin Lee, Changgu Lee

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.

Original languageEnglish
Pages (from-to)3978-3985
Number of pages8
JournalNano Letters
Volume20
Issue number5
DOIs
Publication statusPublished - 2020 May 13

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) (NRF-2016K1A1A2912707, 2016R1A2B4012931, 2016R1A6A3A11934734 2018R1D1A1B07049669, and 2020R1A2C2014687), the Institute for Basic Science (IBS) in Korea (IBS-R009-G1), the KISTI grant (KSC-2018-CRE-0119) the Global Frontier Research Center for Advanced Soft Electronics (CASE-2013M3A6A5073173), Samsung Research Funding Center of Samsung Electronics (project no. SRFC-MA1802-01), and an Institute for Information & Communications Technology Promotion (IITP) grant (B0117-16-1003) funded by the Ministry of Science and ICT of Korea. Authors acknowledge Korea Advanced Nano fabrication Center, Suwon, for help with TEM measurements on FM/AFM heterostructures. The authors acknowledge Dr. Budhi Singh IUAC, New Delhi, India, for useful discussions during the initial phase of the project.

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) (NRF-2016K1A1A2912707, 2016R1A2B4012931, 2016R1A6A3A11934734, 2018R1D1A1B07049669, and 2020R1A2C2014687), the Institute for Basic Science (IBS) in Korea (IBS-R009-G1), the KISTI grant (KSC-2018-CRE-0119), the Global Frontier Research Center for Advanced Soft Electronics (CASE-2013M3A6A5073173), Samsung Research Funding Center of Samsung Electronics (project no. SRFC-MA1802-01), and an Institute for Information & Communications Technology Promotion (IITP) grant (B0117-16-1003) funded by the Ministry of Science and ICT of Korea. Authors acknowledge Korea Advanced Nano fabrication Center, Suwon, for help with TEM measurements on FM/AFM heterostructures. The authors acknowledge Dr. Budhi Singh, IUAC, New Delhi, India, for useful discussions during the initial phase of the project.

Publisher Copyright:
Copyright © 2020 American Chemical Society.

Keywords

  • FM/AFM heterostructures
  • electric field effect
  • exchange bias effect
  • magnetic anisotropy
  • magnetic ordering
  • van der Waals magnets

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

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