Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

Youn Ho Park; Jun Woo Choi; Joonyeon Chang; Heon Jin Choi; Hyun Cheol Koo

doi:10.1016/j.cap.2015.02.018

Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

Youn Ho Park, Jun Woo Choi, Joonyeon Chang, Heon Jin Choi, Hyun Cheol Koo

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Abstract Exchange biased Co₈₄Fe₁₆/Ir₂₂Mn₇₈ bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co₈₄Fe₁₆/Ir₂₂Mn₇₈ electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

Original language	English
Article number	3889
Pages (from-to)	S32-S35
Journal	Current Applied Physics
Volume	15
Issue number	S1
DOIs	https://doi.org/10.1016/j.cap.2015.02.018
Publication status	Published - 2015 Aug 3

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) ( No. 2010–0017457 ) and the KIST Institutional Program.

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Rashba effect
Spin logic device
Spin transistor
Spintronics

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2015.02.018

Cite this

@article{29e1d53f43944d92882c0ae357e0484b,

title = "Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors",

abstract = "Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.",

keywords = "Rashba effect, Spin logic device, Spin transistor, Spintronics",

author = "Park, {Youn Ho} and Choi, {Jun Woo} and Joonyeon Chang and Choi, {Heon Jin} and Koo, {Hyun Cheol}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) ( No. 2010–0017457 ) and the KIST Institutional Program. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = aug,

day = "3",

doi = "10.1016/j.cap.2015.02.018",

language = "English",

volume = "15",

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journal = "Current Applied Physics",

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T1 - Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

AU - Park, Youn Ho

AU - Choi, Jun Woo

AU - Chang, Joonyeon

AU - Choi, Heon Jin

AU - Koo, Hyun Cheol

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) ( No. 2010–0017457 ) and the KIST Institutional Program. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/8/3

Y1 - 2015/8/3

N2 - Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

AB - Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

KW - Rashba effect

KW - Spin logic device

KW - Spin transistor

KW - Spintronics

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DO - 10.1016/j.cap.2015.02.018

M3 - Article

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SN - 1567-1739

VL - 15

SP - S32-S35

JO - Current Applied Physics

JF - Current Applied Physics

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ER -

Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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