Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

Youn Ho Park, Jun Woo Choi, Joonyeon Chang, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

Original languageEnglish
Article number3889
Pages (from-to)S32-S35
JournalCurrent Applied Physics
Issue numberS1
Publication statusPublished - 2015 Aug 3


  • Rashba effect
  • Spin logic device
  • Spin transistor
  • Spintronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


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