Excimer laser annealing effects on AlGaN/GaN heterostructures

In Hak Lee; Beom Soo Joo; Hyuk Jin Kim; Ye Seul Yun; Seun Yup Jang; Min Gyu Kang; Chong Yun Kang; Byeong Gyu Park; Moonsup Han; Young Jun Chang

doi:10.1016/j.cap.2016.03.013

Excimer laser annealing effects on AlGaN/GaN heterostructures

In Hak Lee, Beom Soo Joo, Hyuk Jin Kim, Ye Seul Yun, Seun Yup Jang, Min Gyu Kang, Chong Yun Kang, Byeong Gyu Park, Moonsup Han, Young Jun Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm², we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga₂O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures.

Original language	English
Pages (from-to)	628-632
Number of pages	5
Journal	Current Applied Physics
Volume	16
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2016.03.013
Publication status	Published - 2016 Jun 1

Bibliographical note

Funding Information:
This work was supported by the 2014 Research Fund of the University of Seoul for Young Jun Chang. Also, this work was supported by the National Research Foundation of Korea (NRF) Grant No. NRF-2015M2B2A4033010 for In Hak Lee and Hyuk Jin Kim, and NRF-2012M2B2A4029470 for Beom Soo Joo and Moonsup Han. PLS-II was supported in part by the Ministry of Science, ICT and Future Planning and Pohang University of Science and Technology .

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

Keywords

GaN
Hall measurement
Laser annealing
PL
XPS

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2016.03.013

Cite this

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title = "Excimer laser annealing effects on AlGaN/GaN heterostructures",

abstract = "We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm2, we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures.",

keywords = "GaN, Hall measurement, Laser annealing, PL, XPS",

author = "Lee, {In Hak} and Joo, {Beom Soo} and Kim, {Hyuk Jin} and Yun, {Ye Seul} and Jang, {Seun Yup} and Kang, {Min Gyu} and Kang, {Chong Yun} and Park, {Byeong Gyu} and Moonsup Han and Chang, {Young Jun}",

note = "Funding Information: This work was supported by the 2014 Research Fund of the University of Seoul for Young Jun Chang. Also, this work was supported by the National Research Foundation of Korea (NRF) Grant No. NRF-2015M2B2A4033010 for In Hak Lee and Hyuk Jin Kim, and NRF-2012M2B2A4029470 for Beom Soo Joo and Moonsup Han. PLS-II was supported in part by the Ministry of Science, ICT and Future Planning and Pohang University of Science and Technology . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.cap.2016.03.013",

language = "English",

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T1 - Excimer laser annealing effects on AlGaN/GaN heterostructures

AU - Lee, In Hak

AU - Joo, Beom Soo

AU - Kim, Hyuk Jin

AU - Yun, Ye Seul

AU - Jang, Seun Yup

AU - Kang, Min Gyu

AU - Kang, Chong Yun

AU - Park, Byeong Gyu

AU - Han, Moonsup

AU - Chang, Young Jun

N1 - Funding Information: This work was supported by the 2014 Research Fund of the University of Seoul for Young Jun Chang. Also, this work was supported by the National Research Foundation of Korea (NRF) Grant No. NRF-2015M2B2A4033010 for In Hak Lee and Hyuk Jin Kim, and NRF-2012M2B2A4029470 for Beom Soo Joo and Moonsup Han. PLS-II was supported in part by the Ministry of Science, ICT and Future Planning and Pohang University of Science and Technology . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm2, we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures.

AB - We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm2, we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures.

KW - GaN

KW - Hall measurement

KW - Laser annealing

KW - PL

KW - XPS

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Excimer laser annealing effects on AlGaN/GaN heterostructures

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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