Abstract
A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning No.7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135°C with an applied voltage as small as 35VDC, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.
Original language | English |
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Pages (from-to) | 173-178 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 444 |
Publication status | Published - 1997 |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering