Experimental analysis of the process of anodic bonding using an evaporated glass layer

W. B. Choi; B. K. Ju; Y. H. Lee; M. R. Haskard; S. J. Jeong; N. Y. Lee; M. Y. Sung; M. H. Oh

Experimental analysis of the process of anodic bonding using an evaporated glass layer

W. B. Choi, B. K. Ju, Y. H. Lee, M. R. Haskard, S. J. Jeong, N. Y. Lee, M. Y. Sung, M. H. Oh

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning No.7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135°C with an applied voltage as small as 35V_DC, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.

Original language	English
Pages (from-to)	173-178
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	444
Publication status	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{c6b79d7f9b134272b505b15d5497c68d,

title = "Experimental analysis of the process of anodic bonding using an evaporated glass layer",

abstract = "A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning No.7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135°C with an applied voltage as small as 35VDC, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.",

author = "Choi, {W. B.} and Ju, {B. K.} and Lee, {Y. H.} and Haskard, {M. R.} and Jeong, {S. J.} and Lee, {N. Y.} and Sung, {M. Y.} and Oh, {M. H.}",

year = "1997",

language = "English",

volume = "444",

pages = "173--178",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Experimental analysis of the process of anodic bonding using an evaporated glass layer

AU - Choi, W. B.

AU - Ju, B. K.

AU - Lee, Y. H.

AU - Haskard, M. R.

AU - Jeong, S. J.

AU - Lee, N. Y.

AU - Sung, M. Y.

AU - Oh, M. H.

PY - 1997

Y1 - 1997

N2 - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning No.7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135°C with an applied voltage as small as 35VDC, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.

AB - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning No.7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135°C with an applied voltage as small as 35VDC, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.

UR - http://www.scopus.com/inward/record.url?scp=0030643769&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030643769&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030643769

SN - 0272-9172

VL - 444

SP - 173

EP - 178

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Experimental analysis of the process of anodic bonding using an evaporated glass layer

Abstract

ASJC Scopus subject areas

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