Experimental analysis of the process of anodic bonding using an evaporated glass layer

W. B. Choi, B. K. Ju, Y. H. Lee, M. R. Haskard, S. J. Jeong, N. Y. Lee, M. Y. Sung, M. H. Oh

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning No.7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135°C with an applied voltage as small as 35VDC, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.

Original languageEnglish
Pages (from-to)173-178
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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