Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun Yong Yu; Enes Battal; Ali Kemal Okyay; Jaewoo Shim; Jin Hong Park; Jung Woo Baek; Krishna C. Saraswat

doi:10.1016/j.cap.2013.02.021

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun Yong Yu, Enes Battal, Ali Kemal Okyay, Jaewoo Shim, Jin Hong Park, Jung Woo Baek, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10^-5 cm²/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

Original language	English
Pages (from-to)	1060-1063
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2013.02.021
Publication status	Published - 2013 Aug

Bibliographical note

Funding Information:
This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers, the Stanford University INMP program, and the Korea University research fund. This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).

Keywords

Activation energy
Diffusivity
Germanium
In-situ
Phosphorus

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2013.02.021

Cite this

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title = "Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers",

abstract = "We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.",

keywords = "Activation energy, Diffusivity, Germanium, In-situ, Phosphorus",

author = "Yu, {Hyun Yong} and Enes Battal and Okyay, {Ali Kemal} and Jaewoo Shim and Park, {Jin Hong} and Baek, {Jung Woo} and Saraswat, {Krishna C.}",

note = "Funding Information: This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers, the Stanford University INMP program, and the Korea University research fund. This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).",

year = "2013",

month = aug,

doi = "10.1016/j.cap.2013.02.021",

language = "English",

volume = "13",

pages = "1060--1063",

journal = "Current Applied Physics",

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AU - Yu, Hyun Yong

AU - Battal, Enes

AU - Okyay, Ali Kemal

AU - Shim, Jaewoo

AU - Park, Jin Hong

AU - Baek, Jung Woo

AU - Saraswat, Krishna C.

N1 - Funding Information: This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers, the Stanford University INMP program, and the Korea University research fund. This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).

PY - 2013/8

Y1 - 2013/8

N2 - We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

AB - We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

KW - Activation energy

KW - Diffusivity

KW - Germanium

KW - In-situ

KW - Phosphorus

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U2 - 10.1016/j.cap.2013.02.021

DO - 10.1016/j.cap.2013.02.021

M3 - Article

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SN - 1567-1739

VL - 13

SP - 1060

EP - 1063

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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