Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun Yong Yu, Enes Battal, Ali Kemal Okyay, Jaewoo Shim, Jin Hong Park, Jung Woo Baek, Krishna C. Saraswat

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

Original languageEnglish
Pages (from-to)1060-1063
Number of pages4
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2013 Aug

Bibliographical note

Funding Information:
This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers, the Stanford University INMP program, and the Korea University research fund. This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ).


  • Activation energy
  • Diffusivity
  • Germanium
  • In-situ
  • Phosphorus

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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