Experimental demonstration of a ferroelectric FET using paper substrate

Changhwan Shin; Gwang Geun Lee; Dae Hee Han; Seung Pil Han; Eisuke Tokumitsu; Shun Ichiro Ohmi; Dong Joo Kim; Hiroshi Ishiwara; Minseo Park; Seung Hyun Kim; Wan Gyu Lee; Yun Jeong Hwang; Byung Eun Park

doi:10.1587/elex.11.20140447

Experimental demonstration of a ferroelectric FET using paper substrate

Changhwan Shin
, Gwang Geun Lee
, Dae Hee Han
, Seung Pil Han
, Eisuke Tokumitsu
, Shun Ichiro Ohmi
, Dong Joo Kim
, Hiroshi Ishiwara
, Minseo Park
, Seung Hyun Kim
, Wan Gyu Lee
, Yun Jeong Hwang
, Byung Eun Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~10² is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

Original language	English
Article number	20140447
Journal	ieice electronics express
Volume	11
Issue number	14
DOIs	https://doi.org/10.1587/elex.11.20140447
Publication status	Published - 2014 Jul 4
Externally published	Yes

Keywords

Ferroelectric transistor
P(VDF-TRFE)
P3HT
Paper substrate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1587/elex.11.20140447

Cite this

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title = "Experimental demonstration of a ferroelectric FET using paper substrate",

abstract = "A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of \textasciitilde{}20V for the transistor on paper. An on/off current ratio of \textasciitilde{}102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).",

keywords = "Ferroelectric transistor, P(VDF-TRFE), P3HT, Paper substrate",

author = "Changhwan Shin and Lee, \{Gwang Geun\} and Han, \{Dae Hee\} and Han, \{Seung Pil\} and Eisuke Tokumitsu and Ohmi, \{Shun Ichiro\} and Kim, \{Dong Joo\} and Hiroshi Ishiwara and Minseo Park and Kim, \{Seung Hyun\} and Lee, \{Wan Gyu\} and Hwang, \{Yun Jeong\} and Park, \{Byung Eun\}",

year = "2014",

month = jul,

day = "4",

doi = "10.1587/elex.11.20140447",

language = "English",

volume = "11",

journal = "ieice electronics express",

issn = "1349-2543",

publisher = "Institute of Electronics Information Communication Engineers",

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TY - JOUR

T1 - Experimental demonstration of a ferroelectric FET using paper substrate

AU - Shin, Changhwan

AU - Lee, Gwang Geun

AU - Han, Dae Hee

AU - Han, Seung Pil

AU - Tokumitsu, Eisuke

AU - Ohmi, Shun Ichiro

AU - Kim, Dong Joo

AU - Ishiwara, Hiroshi

AU - Park, Minseo

AU - Kim, Seung Hyun

AU - Lee, Wan Gyu

AU - Hwang, Yun Jeong

AU - Park, Byung Eun

PY - 2014/7/4

Y1 - 2014/7/4

N2 - A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

AB - A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

KW - Ferroelectric transistor

KW - P(VDF-TRFE)

KW - P3HT

KW - Paper substrate

UR - https://www.scopus.com/pages/publications/84905041411

U2 - 10.1587/elex.11.20140447

DO - 10.1587/elex.11.20140447

M3 - Article

AN - SCOPUS:84905041411

SN - 1349-2543

VL - 11

JO - ieice electronics express

JF - ieice electronics express

IS - 14

M1 - 20140447

ER -

Experimental demonstration of a ferroelectric FET using paper substrate

Abstract

Keywords

ASJC Scopus subject areas

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