Abstract
The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.
Original language | English |
---|---|
Title of host publication | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 |
Editors | Sammy Kayali |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 10-15 |
Number of pages | 6 |
ISBN (Electronic) | 0780352882, 9780780352889 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Event | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sept 18 → 1998 Sept 18 |
Publication series
Name | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 |
---|---|
Volume | 1998-September |
Other
Other | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 |
---|---|
Country/Territory | United States |
City | Ann Arbor |
Period | 98/9/18 → 98/9/18 |
Bibliographical note
Funding Information:This work is being supported by NASA-Lewis under grant NAG3-1903 and JPL under contract 961358.
Publisher Copyright:
© 1998 IEEE.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation