@inproceedings{b0e05f3dd17a444786204c07862528fe,
title = "Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si",
abstract = "The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.",
author = "Rieh, {J. S.} and Lu, {L. H.} and Katehi, {L. P.B.} and Bhattacharya, {P. K.} and Croke, {E. T.}",
note = "Funding Information: This work is being supported by NASA-Lewis under grant NAG3-1903 and JPL under contract 961358. Publisher Copyright: {\textcopyright} 1998 IEEE.; 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 ; Conference date: 18-09-1998 Through 18-09-1998",
year = "1998",
doi = "10.1109/SMIC.1998.750169",
language = "English",
series = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "10--15",
editor = "Sammy Kayali",
booktitle = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",
}