Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

H. Choi; H. Lee; J. Park; H. Y. Yu; T. G. Kim; C. Shin

doi:10.1063/1.4968183

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

H. Choi, H. Lee, J. Park, H. Y. Yu, T. G. Kim, C. Shin

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

As a three-dimensional topological insulator (TI), bismuth telluride (Bi₂Te₃) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal-insulator-semiconductor (MIS) capacitor (i.e., metal-Bi₂Te₃-SiO₂-silicon) is fabricated. The capacitance-voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.

Original language	English
Article number	203505
Journal	Applied Physics Letters
Volume	109
Issue number	20
DOIs	https://doi.org/10.1063/1.4968183
Publication status	Published - 2016 Nov 14

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Nos. 2014R1A2A1A11050637 and 2016R1A3B1908249). Also, this work was supported by the Future Semiconductor Device Technology Development Program (10067746) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium (KSRC)

Publisher Copyright:
© 2016 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device",

abstract = "As a three-dimensional topological insulator (TI), bismuth telluride (Bi2Te3) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal-insulator-semiconductor (MIS) capacitor (i.e., metal-Bi2Te3-SiO2-silicon) is fabricated. The capacitance-voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.",

author = "H. Choi and H. Lee and J. Park and Yu, {H. Y.} and Kim, {T. G.} and C. Shin",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Nos. 2014R1A2A1A11050637 and 2016R1A3B1908249). Also, this work was supported by the Future Semiconductor Device Technology Development Program (10067746) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium (KSRC) Publisher Copyright: {\textcopyright} 2016 Author(s).",

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AU - Choi, H.

AU - Lee, H.

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AU - Yu, H. Y.

AU - Kim, T. G.

AU - Shin, C.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Nos. 2014R1A2A1A11050637 and 2016R1A3B1908249). Also, this work was supported by the Future Semiconductor Device Technology Development Program (10067746) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium (KSRC) Publisher Copyright: © 2016 Author(s).

PY - 2016/11/14

Y1 - 2016/11/14

N2 - As a three-dimensional topological insulator (TI), bismuth telluride (Bi2Te3) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal-insulator-semiconductor (MIS) capacitor (i.e., metal-Bi2Te3-SiO2-silicon) is fabricated. The capacitance-voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.

AB - As a three-dimensional topological insulator (TI), bismuth telluride (Bi2Te3) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal-insulator-semiconductor (MIS) capacitor (i.e., metal-Bi2Te3-SiO2-silicon) is fabricated. The capacitance-voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.

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Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

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