Experiments on anisotropic etching of Si in TMAH

Jae Sung You; Donghwan Kim; Joo Youl Huh; Ho Joon Park; James Jungho Pak; Choon Sik Kang

doi:10.1016/S0927-0248(00)00156-2

Experiments on anisotropic etching of Si in TMAH

Jae Sung You, Donghwan Kim, Joo Youl Huh, Ho Joon Park, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journal › Article › peer-review

84 Citations (Scopus)

Abstract

Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

Original language	English
Pages (from-to)	37-44
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(00)00156-2
Publication status	Published - 2001 Feb

Bibliographical note

Funding Information:
This research was financially supported by the Korean Research Foundation made in the program year of 1999. The authors would like to thank Min Soek Song for his help in making masks for patterned pyramid etching experiment, and Yong Won Jeong for his help in the etching experiment.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0927-0248(00)00156-2

Cite this

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title = "Experiments on anisotropic etching of Si in TMAH",

abstract = "Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.",

author = "You, {Jae Sung} and Donghwan Kim and Huh, {Joo Youl} and Park, {Ho Joon} and Pak, {James Jungho} and Kang, {Choon Sik}",

note = "Funding Information: This research was financially supported by the Korean Research Foundation made in the program year of 1999. The authors would like to thank Min Soek Song for his help in making masks for patterned pyramid etching experiment, and Yong Won Jeong for his help in the etching experiment.",

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T1 - Experiments on anisotropic etching of Si in TMAH

AU - You, Jae Sung

AU - Kim, Donghwan

AU - Huh, Joo Youl

AU - Park, Ho Joon

AU - Pak, James Jungho

AU - Kang, Choon Sik

N1 - Funding Information: This research was financially supported by the Korean Research Foundation made in the program year of 1999. The authors would like to thank Min Soek Song for his help in making masks for patterned pyramid etching experiment, and Yong Won Jeong for his help in the etching experiment.

PY - 2001/2

Y1 - 2001/2

N2 - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

AB - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

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Experiments on anisotropic etching of Si in TMAH

Abstract

Bibliographical note

ASJC Scopus subject areas

UN SDGs

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