Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.
Bibliographical noteFunding Information:
This research was financially supported by the Korean Research Foundation made in the program year of 1999. The authors would like to thank Min Soek Song for his help in making masks for patterned pyramid etching experiment, and Yong Won Jeong for his help in the etching experiment.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films