Extended defects in CdZnTe crystals: Effects on device performance

A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, K. H. Kim, R. Gul, L. Xu, R. B. James

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.

Original languageEnglish
Pages (from-to)1795-1799
Number of pages5
JournalJournal of Crystal Growth
Issue number11
Publication statusPublished - 2010 May 15
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates , LLC under Contract no. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.


  • A1. Defects
  • A1. Etching
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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