Extracting the device parameters from organic thin film transistors

Eung Seok Park; Pil Soo Kang; Gyu Tae Kim

doi:10.1557/proc-0965-s06-12

Extracting the device parameters from organic thin film transistors

Eung Seok Park, Pil Soo Kang, Gyu Tae Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

Original language	English
Title of host publication	Organic Electronics
Subtitle of host publication	Materials, Devices and Applications
Publisher	Materials Research Society
Pages	327-332
Number of pages	6
ISBN (Print)	9781604234176
DOIs	https://doi.org/10.1557/proc-0965-s06-12
Publication status	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Dec 1

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	965
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06/11/27 → 06/12/1

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-0965-s06-12

Cite this

Extracting the device parameters from organic thin film transistors. / Park, Eung Seok; Kang, Pil Soo; Kim, Gyu Tae.
Organic Electronics: Materials, Devices and Applications. Materials Research Society, 2006. p. 327-332 (Materials Research Society Symposium Proceedings; Vol. 965).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{c83fec3bd077432a86c0d07c8b39942b,

title = "Extracting the device parameters from organic thin film transistors",

abstract = "Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.",

author = "Park, {Eung Seok} and Kang, {Pil Soo} and Kim, {Gyu Tae}",

year = "2006",

doi = "10.1557/proc-0965-s06-12",

language = "English",

isbn = "9781604234176",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "327--332",

booktitle = "Organic Electronics",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

}

TY - GEN

T1 - Extracting the device parameters from organic thin film transistors

AU - Park, Eung Seok

AU - Kang, Pil Soo

AU - Kim, Gyu Tae

PY - 2006

Y1 - 2006

N2 - Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

AB - Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

UR - http://www.scopus.com/inward/record.url?scp=40949164678&partnerID=8YFLogxK

U2 - 10.1557/proc-0965-s06-12

DO - 10.1557/proc-0965-s06-12

M3 - Conference contribution

AN - SCOPUS:40949164678

SN - 9781604234176

T3 - Materials Research Society Symposium Proceedings

SP - 327

EP - 332

BT - Organic Electronics

PB - Materials Research Society

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

Extracting the device parameters from organic thin film transistors

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this