Abstract
Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (Dmax), and the impact of series resistance (Rsd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.
Original language | English |
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Pages (from-to) | 3050-3053 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 65 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2018 Jul |
Keywords
- 2-D transition-metal dichalcogenides (TMDs)
- bulk channel mobility
- maximum depletion width
- partially depleted (PD)
- series resistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering