Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors

Dae Young Jeon, Dong Su Lee, Seoung Ki Lee, Min Park, So Jeong Park, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (Dmax), and the impact of series resistance (Rsd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.

Original languageEnglish
Pages (from-to)3050-3053
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2018 Jul


  • 2-D transition-metal dichalcogenides (TMDs)
  • bulk channel mobility
  • maximum depletion width
  • partially depleted (PD)
  • series resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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