Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (Dmax), and the impact of series resistance (Rsd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.
Bibliographical noteFunding Information:
Manuscript received February 26, 2018; revised April 12, 2018; accepted May 9, 2018. Date of publication May 24, 2018; date of current version June 19, 2018. This work was supported in part by the Korea Institute of Science and Technology Institutional Program, in part by the National Research Foundation of Korea under Grant NRF-2017M3A7B4049167 and Grant NRF-2016R1A6A3A11933511, and in part by Korea University. The review of this paper was arranged by Editor F. Schwierz. (Corresponding author: Dae-Young Jeon.) D.-Y. Jeon, D. S. Lee, S.-K. Lee, and M. Park are with the Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 55324, South Korea (e-mail: email@example.com).
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- 2-D transition-metal dichalcogenides (TMDs)
- bulk channel mobility
- maximum depletion width
- partially depleted (PD)
- series resistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering