Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors

Dae Young Jeon; Dong Su Lee; Seoung Ki Lee; Min Park; So Jeong Park; Gyu Tae Kim

doi:10.1109/TED.2018.2836345

Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS₂ Field-Effect Transistors

Dae Young Jeon, Dong Su Lee, Seoung Ki Lee, Min Park, So Jeong Park, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS₂) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D_max), and the impact of series resistance (R_sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS₂ transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.

Original language	English
Pages (from-to)	3050-3053
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	7
DOIs	https://doi.org/10.1109/TED.2018.2836345
Publication status	Published - 2018 Jul

Bibliographical note

Funding Information:
Manuscript received February 26, 2018; revised April 12, 2018; accepted May 9, 2018. Date of publication May 24, 2018; date of current version June 19, 2018. This work was supported in part by the Korea Institute of Science and Technology Institutional Program, in part by the National Research Foundation of Korea under Grant NRF-2017M3A7B4049167 and Grant NRF-2016R1A6A3A11933511, and in part by Korea University. The review of this paper was arranged by Editor F. Schwierz. (Corresponding author: Dae-Young Jeon.) D.-Y. Jeon, D. S. Lee, S.-K. Lee, and M. Park are with the Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 55324, South Korea (e-mail: dyjeon@kist.re.kr).

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

2-D transition-metal dichalcogenides (TMDs)
bulk channel mobility
maximum depletion width
partially depleted (PD)
series resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2018.2836345

Cite this

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title = "Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors",

abstract = "Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (Dmax), and the impact of series resistance (Rsd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.",

keywords = "2-D transition-metal dichalcogenides (TMDs), bulk channel mobility, maximum depletion width, partially depleted (PD), series resistance",

author = "Jeon, {Dae Young} and Lee, {Dong Su} and Lee, {Seoung Ki} and Min Park and Park, {So Jeong} and Kim, {Gyu Tae}",

note = "Funding Information: Manuscript received February 26, 2018; revised April 12, 2018; accepted May 9, 2018. Date of publication May 24, 2018; date of current version June 19, 2018. This work was supported in part by the Korea Institute of Science and Technology Institutional Program, in part by the National Research Foundation of Korea under Grant NRF-2017M3A7B4049167 and Grant NRF-2016R1A6A3A11933511, and in part by Korea University. The review of this paper was arranged by Editor F. Schwierz. (Corresponding author: Dae-Young Jeon.) D.-Y. Jeon, D. S. Lee, S.-K. Lee, and M. Park are with the Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 55324, South Korea (e-mail: dyjeon@kist.re.kr). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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AU - Kim, Gyu Tae

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