In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm2/(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.
Bibliographical noteFunding Information:
This research was supported by the Global Research Laboratory Program of the National Research Foundation (NRF) funded by Ministry of Science, Information and Communication Technologies and Future Planning (NRF-2015K1A1A2029679), and partially supported by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, Information and Communication Technologies and Future Planning (NRF-2015M3A7B4050306).
© 2016 American Chemical Society.
- carbon nanotube
- low cost
- oxide semiconductor
- thin-film transistor
ASJC Scopus subject areas
- General Materials Science