Fabrication and characterization of a nano-device with v2O 5 nanowires

Mi Ra Min, Jae Hoon Kim, Eun Kyu Kim, Yong Kwan Kim, Jeong Sook Ha, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We fabricated nano-devices with V2O5 nanowires synthesized by using the gel/sol method, and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure with V 2O5 nanowires on p-type Si substrates, HfO2 dielectrics and Au gate were deposited on the V2O5 nanowires. The electrical properties of this MIS diode were characterized by using capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a flat-band voltage gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via nanowires, Au nano-electrodes with a 30 nm gap were fabricated on a SiO2/SI substrate by using electron-beam lithography. This device with V2O5 nanowires inserted into nano-gap electrodes showed an apparent electron tunneling behavior. These electrical properties imply that the use of V2O5 nanowires for memory and tunneling devices may be feasible.

Original languageEnglish
Pages (from-to)1819-1822
Number of pages4
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2007 Jun


  • Metal-insulator-semiconductor
  • Nanowires
  • Tunneling device

ASJC Scopus subject areas

  • General Physics and Astronomy


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