Abstract
We fabricated diamond-like-carbon (DLC) coated knife edge field emitter array (KEFEA) on the (110) oriented silicon wafer. The fabricated KEFEA have above six hundreds times of aspect ratio. Then we coated the KEFEA with 300 angstroms thick DLC film by PECVD method. And we measured the emission current from the KEFEA under vacuum pressure of around 2×10-7 torr. The threshold voltage of the DLC-coated KEFEA lowered about 200 V compared with the bare Si KEFEA. By coating the DLC film, it's emission stability was dramatically improved. A simulation on the emitter has been performed by using MAXWELL software.
Original language | English |
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Pages | 226-230 |
Number of pages | 5 |
Publication status | Published - 1996 |
Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
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City | St.Petersburg, Russia |
Period | 96/7/7 → 96/7/12 |
ASJC Scopus subject areas
- Surfaces and Interfaces