Fabrication and characterization of DLC-coated field emitter array

Chang Gi Ko; Byeong Kwon Ju; Yun Hi Lee; Jung Ho Park; Myung Hwan Oh

Fabrication and characterization of DLC-coated field emitter array

Chang Gi Ko^*
, Byeong Kwon Ju
, Yun Hi Lee
, Jung Ho Park
, Myung Hwan Oh

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated diamond-like-carbon (DLC) coated knife edge field emitter array (KEFEA) on the (110) oriented silicon wafer. The fabricated KEFEA have above six hundreds times of aspect ratio. Then we coated the KEFEA with 300 angstroms thick DLC film by PECVD method. And we measured the emission current from the KEFEA under vacuum pressure of around 2×10^-7 torr. The threshold voltage of the DLC-coated KEFEA lowered about 200 V compared with the bare Si KEFEA. By coating the DLC film, it's emission stability was dramatically improved. A simulation on the emitter has been performed by using MAXWELL software.

Original language	English
Pages	226-230
Number of pages	5
Publication status	Published - 1996
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12

Other

Other	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	96/7/7 → 96/7/12

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

@conference{e04d5fcdc6924977a308d6a30282dccf,

title = "Fabrication and characterization of DLC-coated field emitter array",

abstract = "We fabricated diamond-like-carbon (DLC) coated knife edge field emitter array (KEFEA) on the (110) oriented silicon wafer. The fabricated KEFEA have above six hundreds times of aspect ratio. Then we coated the KEFEA with 300 angstroms thick DLC film by PECVD method. And we measured the emission current from the KEFEA under vacuum pressure of around 2{\texttimes}10-7 torr. The threshold voltage of the DLC-coated KEFEA lowered about 200 V compared with the bare Si KEFEA. By coating the DLC film, it's emission stability was dramatically improved. A simulation on the emitter has been performed by using MAXWELL software.",

author = "Ko, \{Chang Gi\} and Ju, \{Byeong Kwon\} and Lee, \{Yun Hi\} and Park, \{Jung Ho\} and Oh, \{Myung Hwan\}",

year = "1996",

language = "English",

pages = "226--230",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

}

TY - CONF

T1 - Fabrication and characterization of DLC-coated field emitter array

AU - Ko, Chang Gi

AU - Ju, Byeong Kwon

AU - Lee, Yun Hi

AU - Park, Jung Ho

AU - Oh, Myung Hwan

PY - 1996

Y1 - 1996

N2 - We fabricated diamond-like-carbon (DLC) coated knife edge field emitter array (KEFEA) on the (110) oriented silicon wafer. The fabricated KEFEA have above six hundreds times of aspect ratio. Then we coated the KEFEA with 300 angstroms thick DLC film by PECVD method. And we measured the emission current from the KEFEA under vacuum pressure of around 2×10-7 torr. The threshold voltage of the DLC-coated KEFEA lowered about 200 V compared with the bare Si KEFEA. By coating the DLC film, it's emission stability was dramatically improved. A simulation on the emitter has been performed by using MAXWELL software.

AB - We fabricated diamond-like-carbon (DLC) coated knife edge field emitter array (KEFEA) on the (110) oriented silicon wafer. The fabricated KEFEA have above six hundreds times of aspect ratio. Then we coated the KEFEA with 300 angstroms thick DLC film by PECVD method. And we measured the emission current from the KEFEA under vacuum pressure of around 2×10-7 torr. The threshold voltage of the DLC-coated KEFEA lowered about 200 V compared with the bare Si KEFEA. By coating the DLC film, it's emission stability was dramatically improved. A simulation on the emitter has been performed by using MAXWELL software.

UR - https://www.scopus.com/pages/publications/0030372089

UR - https://www.scopus.com/pages/publications/0030372089#tab=citedBy

M3 - Paper

AN - SCOPUS:0030372089

SP - 226

EP - 230

T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

ER -

Fabrication and characterization of DLC-coated field emitter array

Abstract

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ASJC Scopus subject areas

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