Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO

Kyoungwon Kim; Yong Won Song; Seongpil Chang; In Ho Kim; Sangsig Kim; Sang Yeol Lee

doi:10.1016/j.tsf.2009.03.229

Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO

Kyoungwon Kim, Yong Won Song, Seongpil Chang, In Ho Kim, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

We demonstrate an efficient CO sensor using Ga-doped ZnO (GZO) nanowires (NWs). Various GZO NWs are synthesized with Au catalysts on sapphire substrates by hot-walled pulse laser deposition. The deposition temperature of ZnO NWs was in the range of 800-900 °C. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) characterizations indicate that the obtained NWs have the well-crystallized hexagonal structure with customized Ga-doping concentration of 0-5 wt.%. The NWs have the diameter of about 50 nm and the length of about 8 μm. After depositing the Ag electrodes on both sides of the NW cluster, the resistance change is checked with the exposure to CO gas in the self-designed gas chamber that can facilitate the detection of the resistance change and the control of gas flow as well as temperature. The detected resistance modulations are 1.0 kΩ and 83.2 kΩ in the cases of 3 wt.% GZO and pure ZnO NW clusters, respectively, indication that we successfully customize the sensitivity of the gas sensors by controlled doping.

Original language	English
Pages (from-to)	1190-1193
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2009.03.229
Publication status	Published - 2009 Dec 15

Bibliographical note

Funding Information:
This work was supported by the program of nano-material technology development (M108KO010021-08 K1501-02110) funded from Center for Nanostructured Materials Technology (CNMT), South Korea. Also, supported by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Commerce, Industry and Energy (MOCIE), South Korea.

Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.

Keywords

Co gas
Ga-doped ZnO
Gas sensor
HW-PLD
Nanowires

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.03.229

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title = "Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO",

abstract = "We demonstrate an efficient CO sensor using Ga-doped ZnO (GZO) nanowires (NWs). Various GZO NWs are synthesized with Au catalysts on sapphire substrates by hot-walled pulse laser deposition. The deposition temperature of ZnO NWs was in the range of 800-900 °C. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) characterizations indicate that the obtained NWs have the well-crystallized hexagonal structure with customized Ga-doping concentration of 0-5 wt.%. The NWs have the diameter of about 50 nm and the length of about 8 μm. After depositing the Ag electrodes on both sides of the NW cluster, the resistance change is checked with the exposure to CO gas in the self-designed gas chamber that can facilitate the detection of the resistance change and the control of gas flow as well as temperature. The detected resistance modulations are 1.0 kΩ and 83.2 kΩ in the cases of 3 wt.% GZO and pure ZnO NW clusters, respectively, indication that we successfully customize the sensitivity of the gas sensors by controlled doping.",

keywords = "Co gas, Ga-doped ZnO, Gas sensor, HW-PLD, Nanowires",

author = "Kyoungwon Kim and Song, {Yong Won} and Seongpil Chang and Kim, {In Ho} and Sangsig Kim and Lee, {Sang Yeol}",

note = "Funding Information: This work was supported by the program of nano-material technology development (M108KO010021-08 K1501-02110) funded from Center for Nanostructured Materials Technology (CNMT), South Korea. Also, supported by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Commerce, Industry and Energy (MOCIE), South Korea. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

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AU - Kim, Kyoungwon

AU - Song, Yong Won

AU - Chang, Seongpil

AU - Kim, In Ho

AU - Kim, Sangsig

AU - Lee, Sang Yeol

N1 - Funding Information: This work was supported by the program of nano-material technology development (M108KO010021-08 K1501-02110) funded from Center for Nanostructured Materials Technology (CNMT), South Korea. Also, supported by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Commerce, Industry and Energy (MOCIE), South Korea. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - We demonstrate an efficient CO sensor using Ga-doped ZnO (GZO) nanowires (NWs). Various GZO NWs are synthesized with Au catalysts on sapphire substrates by hot-walled pulse laser deposition. The deposition temperature of ZnO NWs was in the range of 800-900 °C. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) characterizations indicate that the obtained NWs have the well-crystallized hexagonal structure with customized Ga-doping concentration of 0-5 wt.%. The NWs have the diameter of about 50 nm and the length of about 8 μm. After depositing the Ag electrodes on both sides of the NW cluster, the resistance change is checked with the exposure to CO gas in the self-designed gas chamber that can facilitate the detection of the resistance change and the control of gas flow as well as temperature. The detected resistance modulations are 1.0 kΩ and 83.2 kΩ in the cases of 3 wt.% GZO and pure ZnO NW clusters, respectively, indication that we successfully customize the sensitivity of the gas sensors by controlled doping.

AB - We demonstrate an efficient CO sensor using Ga-doped ZnO (GZO) nanowires (NWs). Various GZO NWs are synthesized with Au catalysts on sapphire substrates by hot-walled pulse laser deposition. The deposition temperature of ZnO NWs was in the range of 800-900 °C. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) characterizations indicate that the obtained NWs have the well-crystallized hexagonal structure with customized Ga-doping concentration of 0-5 wt.%. The NWs have the diameter of about 50 nm and the length of about 8 μm. After depositing the Ag electrodes on both sides of the NW cluster, the resistance change is checked with the exposure to CO gas in the self-designed gas chamber that can facilitate the detection of the resistance change and the control of gas flow as well as temperature. The detected resistance modulations are 1.0 kΩ and 83.2 kΩ in the cases of 3 wt.% GZO and pure ZnO NW clusters, respectively, indication that we successfully customize the sensitivity of the gas sensors by controlled doping.

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KW - Nanowires

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Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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