Fabrication and characterization of high efficiency green nanopillar LED

Jin Woo Ju; Jong Hyeob Baek; Seung Jae Lee; Dae Woo Jeon; Jae Woo Park; Jung Hun Choi; Lee Woon Jang; In Hwan Lee

doi:10.1016/j.jcrysgro.2012.08.051

Fabrication and characterization of high efficiency green nanopillar LED

Jin Woo Ju, Jong Hyeob Baek, Seung Jae Lee, Dae Woo Jeon, Jae Woo Park, Jung Hun Choi, Lee Woon Jang, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.

Original language	English
Pages (from-to)	332-335
Number of pages	4
Journal	Journal of Crystal Growth
Volume	370
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.08.051
Publication status	Published - 2013 May 1
Externally published	Yes

Keywords

A1. HRXRD
A3. Epitaxial lateral overgrowth
A3. MOCVD
B2. Semipolar gan

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2012.08.051

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@article{f4ae7e6be41d401ebbc8d51aff6813cc,

title = "Fabrication and characterization of high efficiency green nanopillar LED",

abstract = "InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.",

keywords = "A1. HRXRD, A3. Epitaxial lateral overgrowth, A3. MOCVD, B2. Semipolar gan",

author = "Ju, {Jin Woo} and Baek, {Jong Hyeob} and Lee, {Seung Jae} and Jeon, {Dae Woo} and Park, {Jae Woo} and Choi, {Jung Hun} and Jang, {Lee Woon} and Lee, {In Hwan}",

year = "2013",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2012.08.051",

language = "English",

volume = "370",

pages = "332--335",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and characterization of high efficiency green nanopillar LED

AU - Ju, Jin Woo

AU - Baek, Jong Hyeob

AU - Lee, Seung Jae

AU - Jeon, Dae Woo

AU - Park, Jae Woo

AU - Choi, Jung Hun

AU - Jang, Lee Woon

AU - Lee, In Hwan

PY - 2013/5/1

Y1 - 2013/5/1

N2 - InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.

AB - InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.

KW - A1. HRXRD

KW - A3. Epitaxial lateral overgrowth

KW - A3. MOCVD

KW - B2. Semipolar gan

UR - http://www.scopus.com/inward/record.url?scp=84901585490&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2012.08.051

DO - 10.1016/j.jcrysgro.2012.08.051

M3 - Article

AN - SCOPUS:84901585490

SN - 0022-0248

VL - 370

SP - 332

EP - 335

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Fabrication and characterization of high efficiency green nanopillar LED

Abstract

Keywords

ASJC Scopus subject areas

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