We fabricated semiconductor superlattices of GaAs1-xSbx in which the chemical composition x varies sinusoidally along the direction of growth. This was accomplished by means of a novel molecular-beam epitaxy growth technique, in which the periodic modulation is achieved by substrate rotation in the presence of non-uniform flux distributions of elemental sources, rather than by shutter openings and closings. The sinusoidal nature of the compositional profiles of GaAs1-xSbx was inferred from the presence of only a single superlattice Fourier component in the X-ray diffraction spectra observed on these novel structures. Superlattice formation by this method is additionally supported by systematic photoluminescence data.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2002 Mar|
Bibliographical noteFunding Information:
This work was supported by the US Department of Energy Grant 97ER45644.
- X-ray diffraction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics