Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation

X. Liu; Y. Sasaki; L. V. Titova; P. M. Reimer; S. Lee; J. K. Furdyna

doi:10.1016/S1386-9477(02)00322-3

Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation

X. Liu, Y. Sasaki, L. V. Titova, P. M. Reimer, S. Lee, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We fabricated semiconductor superlattices of GaAs_1-xSb_x in which the chemical composition x varies sinusoidally along the direction of growth. This was accomplished by means of a novel molecular-beam epitaxy growth technique, in which the periodic modulation is achieved by substrate rotation in the presence of non-uniform flux distributions of elemental sources, rather than by shutter openings and closings. The sinusoidal nature of the compositional profiles of GaAs_1-xSb_x was inferred from the presence of only a single superlattice Fourier component in the X-ray diffraction spectra observed on these novel structures. Superlattice formation by this method is additionally supported by systematic photoluminescence data.

Original language	English
Pages (from-to)	1143-1146
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00322-3
Publication status	Published - 2002 Mar

Bibliographical note

Funding Information:
This work was supported by the US Department of Energy Grant 97ER45644.

Keywords

GaAsSb
Photoluminescence
Superlattices
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S1386-9477(02)00322-3

Cite this

@article{8ea02416d8f1479d9b3ef8b9074fc907,

title = "Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation",

abstract = "We fabricated semiconductor superlattices of GaAs1-xSbx in which the chemical composition x varies sinusoidally along the direction of growth. This was accomplished by means of a novel molecular-beam epitaxy growth technique, in which the periodic modulation is achieved by substrate rotation in the presence of non-uniform flux distributions of elemental sources, rather than by shutter openings and closings. The sinusoidal nature of the compositional profiles of GaAs1-xSbx was inferred from the presence of only a single superlattice Fourier component in the X-ray diffraction spectra observed on these novel structures. Superlattice formation by this method is additionally supported by systematic photoluminescence data.",

keywords = "GaAsSb, Photoluminescence, Superlattices, X-ray diffraction",

author = "X. Liu and Y. Sasaki and Titova, {L. V.} and Reimer, {P. M.} and S. Lee and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by the US Department of Energy Grant 97ER45644.",

year = "2002",

month = mar,

doi = "10.1016/S1386-9477(02)00322-3",

language = "English",

volume = "13",

pages = "1143--1146",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation

AU - Liu, X.

AU - Sasaki, Y.

AU - Titova, L. V.

AU - Reimer, P. M.

AU - Lee, S.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by the US Department of Energy Grant 97ER45644.

PY - 2002/3

Y1 - 2002/3

N2 - We fabricated semiconductor superlattices of GaAs1-xSbx in which the chemical composition x varies sinusoidally along the direction of growth. This was accomplished by means of a novel molecular-beam epitaxy growth technique, in which the periodic modulation is achieved by substrate rotation in the presence of non-uniform flux distributions of elemental sources, rather than by shutter openings and closings. The sinusoidal nature of the compositional profiles of GaAs1-xSbx was inferred from the presence of only a single superlattice Fourier component in the X-ray diffraction spectra observed on these novel structures. Superlattice formation by this method is additionally supported by systematic photoluminescence data.

AB - We fabricated semiconductor superlattices of GaAs1-xSbx in which the chemical composition x varies sinusoidally along the direction of growth. This was accomplished by means of a novel molecular-beam epitaxy growth technique, in which the periodic modulation is achieved by substrate rotation in the presence of non-uniform flux distributions of elemental sources, rather than by shutter openings and closings. The sinusoidal nature of the compositional profiles of GaAs1-xSbx was inferred from the presence of only a single superlattice Fourier component in the X-ray diffraction spectra observed on these novel structures. Superlattice formation by this method is additionally supported by systematic photoluminescence data.

KW - GaAsSb

KW - Photoluminescence

KW - Superlattices

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0036492897&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00322-3

DO - 10.1016/S1386-9477(02)00322-3

M3 - Article

AN - SCOPUS:0036492897

SN - 1386-9477

VL - 13

SP - 1143

EP - 1146

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

ER -

Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this