Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation

X. Liu, Y. Sasaki, L. V. Titova, P. M. Reimer, S. Lee, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We fabricated semiconductor superlattices of GaAs1-xSbx in which the chemical composition x varies sinusoidally along the direction of growth. This was accomplished by means of a novel molecular-beam epitaxy growth technique, in which the periodic modulation is achieved by substrate rotation in the presence of non-uniform flux distributions of elemental sources, rather than by shutter openings and closings. The sinusoidal nature of the compositional profiles of GaAs1-xSbx was inferred from the presence of only a single superlattice Fourier component in the X-ray diffraction spectra observed on these novel structures. Superlattice formation by this method is additionally supported by systematic photoluminescence data.

Original languageEnglish
Pages (from-to)1143-1146
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Publication statusPublished - 2002 Mar

Bibliographical note

Funding Information:
This work was supported by the US Department of Energy Grant 97ER45644.


  • GaAsSb
  • Photoluminescence
  • Superlattices
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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