Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers

S. W. Hwang; Y. S. Yu; W. I. Ha; T. G. Kim; C. K. Han; J. H. Park; M. S. Kim; E. K. Kim; S. K. Min

doi:10.1063/1.117623

Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers

S. W. Hwang, Y. S. Yu, W. I. Ha, T. G. Kim, C. K. Han, J. H. Park, M. S. Kim, E. K. Kim, S. K. Min

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved.

Original language	English
Pages (from-to)	1924-1926
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	13
DOIs	https://doi.org/10.1063/1.117623
Publication status	Published - 1996 Sept 23

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.117623

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title = "Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers",

abstract = "A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved.",

author = "Hwang, {S. W.} and Yu, {Y. S.} and Ha, {W. I.} and Kim, {T. G.} and Han, {C. K.} and Park, {J. H.} and Kim, {M. S.} and Kim, {E. K.} and Min, {S. K.}",

year = "1996",

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AU - Hwang, S. W.

AU - Yu, Y. S.

AU - Ha, W. I.

AU - Kim, T. G.

AU - Han, C. K.

AU - Park, J. H.

AU - Kim, M. S.

AU - Kim, E. K.

AU - Min, S. K.

PY - 1996/9/23

Y1 - 1996/9/23

N2 - A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved.

AB - A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved.

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DO - 10.1063/1.117623

M3 - Article

AN - SCOPUS:0037800562

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SP - 1924

EP - 1926

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers

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