Abstract
We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.
Original language | English |
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Pages (from-to) | 18-20 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 272 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1999 Dec 1 |
Event | Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 1999 Jul 19 → 1999 Jul 23 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering