Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, S. H. Song, S. W. Hwang, J. H. Park, Yong Kim, E. K. Kim

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

    Original languageEnglish
    Pages (from-to)18-20
    Number of pages3
    JournalPhysica B: Condensed Matter
    Volume272
    Issue number1-4
    DOIs
    Publication statusPublished - 1999 Dec 1
    EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
    Duration: 1999 Jul 191999 Jul 23

    Bibliographical note

    Funding Information:
    This work is supported by the Creative Research Initiative Program, Korean Ministry of Science and Technology.

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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