Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung; S. H. Song; S. W. Hwang; J. H. Park; Yong Kim; E. K. Kim

doi:10.1016/S0921-4526(99)00342-7

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, S. H. Song, S. W. Hwang, J. H. Park, Yong Kim, E. K. Kim

School of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

Original language	English
Pages (from-to)	18-20
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00342-7
Publication status	Published - 1999 Dec 1
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 1999 Jul 19 → 1999 Jul 23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(99)00342-7

Cite this

@article{7cdbe07f167e47a785f3cb2ee581761f,

title = "Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots",

abstract = "We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.",

author = "Jung, {S. K.} and Song, {S. H.} and Hwang, {S. W.} and Park, {J. H.} and Yong Kim and Kim, {E. K.}",

note = "Funding Information: This work is supported by the Creative Research Initiative Program, Korean Ministry of Science and Technology.; Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

year = "1999",

month = dec,

day = "1",

doi = "10.1016/S0921-4526(99)00342-7",

language = "English",

volume = "272",

pages = "18--20",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

AU - Jung, S. K.

AU - Song, S. H.

AU - Hwang, S. W.

AU - Park, J. H.

AU - Kim, Yong

AU - Kim, E. K.

N1 - Funding Information: This work is supported by the Creative Research Initiative Program, Korean Ministry of Science and Technology.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

AB - We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

UR - http://www.scopus.com/inward/record.url?scp=0033328757&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00342-7

DO - 10.1016/S0921-4526(99)00342-7

M3 - Conference article

AN - SCOPUS:0033328757

SN - 0921-4526

VL - 272

SP - 18

EP - 20

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this