Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung; S. H. Song; S. W. Hwang; J. H. Park; Yong Kim; E. K. Kim

doi:10.1016/S0921-4526(99)00342-7

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung^*, S. H. Song, S. W. Hwang, J. H. Park, Yong Kim, E. K. Kim

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

Original language	English
Pages (from-to)	18-20
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00342-7
Publication status	Published - 1999 Dec 1
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 1999 Jul 19 → 1999 Jul 23

Bibliographical note

Funding Information:
This work is supported by the Creative Research Initiative Program, Korean Ministry of Science and Technology.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00342-7

Cite this

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title = "Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots",

abstract = "We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.",

author = "Jung, \{S. K.\} and Song, \{S. H.\} and Hwang, \{S. W.\} and Park, \{J. H.\} and Yong Kim and Kim, \{E. K.\}",

note = "Funding Information: This work is supported by the Creative Research Initiative Program, Korean Ministry of Science and Technology.; Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

year = "1999",

month = dec,

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doi = "10.1016/S0921-4526(99)00342-7",

language = "English",

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pages = "18--20",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

AU - Jung, S. K.

AU - Song, S. H.

AU - Hwang, S. W.

AU - Park, J. H.

AU - Kim, Yong

AU - Kim, E. K.

N1 - Funding Information: This work is supported by the Creative Research Initiative Program, Korean Ministry of Science and Technology.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

AB - We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

UR - https://www.scopus.com/pages/publications/0033328757

U2 - 10.1016/S0921-4526(99)00342-7

DO - 10.1016/S0921-4526(99)00342-7

M3 - Conference article

AN - SCOPUS:0033328757

SN - 0921-4526

VL - 272

SP - 18

EP - 20

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Abstract

Bibliographical note

ASJC Scopus subject areas

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