Abstract
A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.
Original language | English |
---|---|
Article number | 033103 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Jul 20 |
Bibliographical note
Publisher Copyright:© 2015 AIP Publishing LLC.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)