Fabrication and Experimental Results of Lateral Trench Electrode IGBT

Ey Goo Kang, Dae Won Kim, Man Young Sung

Research output: Contribution to journalArticlepeer-review


A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

Original languageEnglish
Pages (from-to)405-409
Number of pages5
JournalInternational Journal of Nonlinear Sciences and Numerical Simulation
Issue number3-4
Publication statusPublished - 2002


  • Forward blocking voltage
  • Latch-up
  • Trench Electrode

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Computational Mechanics
  • Modelling and Simulation
  • Engineering (miscellaneous)
  • Mechanics of Materials
  • General Physics and Astronomy
  • Applied Mathematics


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