Fabrication and Experimental Results of Lateral Trench Electrode IGBT

Ey Goo Kang; Dae Won Kim; Man Young Sung

doi:10.1515/IJNSNS.2002.3.3-4.405

Fabrication and Experimental Results of Lateral Trench Electrode IGBT

Ey Goo Kang, Dae Won Kim, Man Young Sung

* Honorary professors

Research output: Contribution to journal › Article › peer-review

Abstract

A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm², 540A/cm² and 1230A/cm², respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

Original language	English
Pages (from-to)	405-409
Number of pages	5
Journal	International Journal of Nonlinear Sciences and Numerical Simulation
Volume	3
Issue number	3-4
DOIs	https://doi.org/10.1515/IJNSNS.2002.3.3-4.405
Publication status	Published - 2002

Keywords

Forward blocking voltage
Latch-up
Trench Electrode

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Computational Mechanics
Modelling and Simulation
Engineering (miscellaneous)
Mechanics of Materials
Physics and Astronomy(all)
Applied Mathematics

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10.1515/IJNSNS.2002.3.3-4.405

Cite this

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title = "Fabrication and Experimental Results of Lateral Trench Electrode IGBT",

abstract = "A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.",

keywords = "Forward blocking voltage, Latch-up, Trench Electrode",

author = "Kang, {Ey Goo} and Kim, {Dae Won} and Sung, {Man Young}",

year = "2002",

doi = "10.1515/IJNSNS.2002.3.3-4.405",

language = "English",

volume = "3",

pages = "405--409",

journal = "International Journal of Nonlinear Sciences and Numerical Simulation",

issn = "1565-1339",

publisher = "Walter de Gruyter GmbH & Co. KG",

number = "3-4",

}

TY - JOUR

T1 - Fabrication and Experimental Results of Lateral Trench Electrode IGBT

AU - Kang, Ey Goo

AU - Kim, Dae Won

AU - Sung, Man Young

PY - 2002

Y1 - 2002

N2 - A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

AB - A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

KW - Forward blocking voltage

KW - Latch-up

KW - Trench Electrode

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JO - International Journal of Nonlinear Sciences and Numerical Simulation

JF - International Journal of Nonlinear Sciences and Numerical Simulation

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Fabrication and Experimental Results of Lateral Trench Electrode IGBT

Abstract

Keywords

ASJC Scopus subject areas

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