Fabrication and Experimental Results of Lateral Trench Electrode IGBT

Ey Goo Kang, Dae Won Kim, Man Young Sung

    Research output: Contribution to journalArticlepeer-review

    Abstract

    A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

    Original languageEnglish
    Pages (from-to)405-409
    Number of pages5
    JournalInternational Journal of Nonlinear Sciences and Numerical Simulation
    Volume3
    Issue number3-4
    DOIs
    Publication statusPublished - 2002

    Keywords

    • Forward blocking voltage
    • Latch-up
    • Trench Electrode

    ASJC Scopus subject areas

    • Statistical and Nonlinear Physics
    • Computational Mechanics
    • Modelling and Simulation
    • Engineering (miscellaneous)
    • Mechanics of Materials
    • General Physics and Astronomy
    • Applied Mathematics

    Fingerprint

    Dive into the research topics of 'Fabrication and Experimental Results of Lateral Trench Electrode IGBT'. Together they form a unique fingerprint.

    Cite this