Fabrication and field emission study of gated DLC-coated silicon tips

Sanjo Lee; Chang Gi Ko; Byeong Kwon Ju; Yun Hi Lee; D. Jeon; Myung Hwan Oh

Fabrication and field emission study of gated DLC-coated silicon tips

Sanjo Lee, Chang Gi Ko, Byeong Kwon Ju, Yun Hi Lee, D. Jeon, Myung Hwan Oh

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Silicon field emission tips were coated with diamond-like-carbon (DLC) films using plasma enhanced chemical vapor deposition (PECVD) to improve its material properties for field emitter applications. The current-voltage characteristics were measured in a vacuum chamber. A Fowler-Nordheim plot was used to further evaluate the gated DLC-coated silicon field emitters indicating that the current measured is due to the field emissions. The hysteresis of the emission current was tested by cycling the gate bias where a noticeable hysteresis was not recognized. Fluctuations of the emission current were plotted, showing that the fluctuation is bigger for the higher gate bias.

Original language	English
Pages	193-196
Number of pages	4
Publication status	Published - 1996
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12

Other

Other	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	96/7/7 → 96/7/12

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

@conference{173ef625b3564bb7ae1719bbf82b2e20,

title = "Fabrication and field emission study of gated DLC-coated silicon tips",

abstract = "Silicon field emission tips were coated with diamond-like-carbon (DLC) films using plasma enhanced chemical vapor deposition (PECVD) to improve its material properties for field emitter applications. The current-voltage characteristics were measured in a vacuum chamber. A Fowler-Nordheim plot was used to further evaluate the gated DLC-coated silicon field emitters indicating that the current measured is due to the field emissions. The hysteresis of the emission current was tested by cycling the gate bias where a noticeable hysteresis was not recognized. Fluctuations of the emission current were plotted, showing that the fluctuation is bigger for the higher gate bias.",

author = "Sanjo Lee and Ko, {Chang Gi} and Ju, {Byeong Kwon} and Lee, {Yun Hi} and D. Jeon and Oh, {Myung Hwan}",

year = "1996",

language = "English",

pages = "193--196",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

}

TY - CONF

T1 - Fabrication and field emission study of gated DLC-coated silicon tips

AU - Lee, Sanjo

AU - Ko, Chang Gi

AU - Ju, Byeong Kwon

AU - Lee, Yun Hi

AU - Jeon, D.

AU - Oh, Myung Hwan

PY - 1996

Y1 - 1996

N2 - Silicon field emission tips were coated with diamond-like-carbon (DLC) films using plasma enhanced chemical vapor deposition (PECVD) to improve its material properties for field emitter applications. The current-voltage characteristics were measured in a vacuum chamber. A Fowler-Nordheim plot was used to further evaluate the gated DLC-coated silicon field emitters indicating that the current measured is due to the field emissions. The hysteresis of the emission current was tested by cycling the gate bias where a noticeable hysteresis was not recognized. Fluctuations of the emission current were plotted, showing that the fluctuation is bigger for the higher gate bias.

AB - Silicon field emission tips were coated with diamond-like-carbon (DLC) films using plasma enhanced chemical vapor deposition (PECVD) to improve its material properties for field emitter applications. The current-voltage characteristics were measured in a vacuum chamber. A Fowler-Nordheim plot was used to further evaluate the gated DLC-coated silicon field emitters indicating that the current measured is due to the field emissions. The hysteresis of the emission current was tested by cycling the gate bias where a noticeable hysteresis was not recognized. Fluctuations of the emission current were plotted, showing that the fluctuation is bigger for the higher gate bias.

UR - http://www.scopus.com/inward/record.url?scp=0030358955&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030358955&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030358955

SP - 193

EP - 196

T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

ER -

Fabrication and field emission study of gated DLC-coated silicon tips

Abstract

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ASJC Scopus subject areas

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