Fabrication and its response characteristics of MELO accelerometer

James Jungho Pak; Seung H. Yi; Young K. Sung; Gerold W. Neudeck

Fabrication and its response characteristics of MELO accelerometer

James Jungho Pak, Seung H. Yi, Young K. Sung, Gerold W. Neudeck

School of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged lateral epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting of a local silicon-on-insulator (SOI) structure, resulting in a high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30g.

Original language	English
Pages	32-35
Number of pages	4
Publication status	Published - 1995
Event	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong Duration: 1995 Nov 6 → 1995 Nov 10

Other

Other	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
City	Hong Kong, Hong Kong
Period	95/11/6 → 95/11/10

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Cite this

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title = "Fabrication and its response characteristics of MELO accelerometer",

abstract = "This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged lateral epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting of a local silicon-on-insulator (SOI) structure, resulting in a high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30g.",

author = "Pak, {James Jungho} and Yi, {Seung H.} and Sung, {Young K.} and Neudeck, {Gerold W.}",

year = "1995",

language = "English",

pages = "32--35",

note = "Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 ; Conference date: 06-11-1995 Through 10-11-1995",

}

TY - CONF

T1 - Fabrication and its response characteristics of MELO accelerometer

AU - Pak, James Jungho

AU - Yi, Seung H.

AU - Sung, Young K.

AU - Neudeck, Gerold W.

PY - 1995

Y1 - 1995

N2 - This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged lateral epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting of a local silicon-on-insulator (SOI) structure, resulting in a high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30g.

AB - This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged lateral epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting of a local silicon-on-insulator (SOI) structure, resulting in a high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30g.

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M3 - Paper

AN - SCOPUS:0029486994

SP - 32

EP - 35

T2 - Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95

Y2 - 6 November 1995 through 10 November 1995

ER -

Fabrication and its response characteristics of MELO accelerometer

Abstract

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ASJC Scopus subject areas

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