Fabrication method of GaN template for high-speed chemical lift-off

Woo Seop Jeong; Min Joo Ahn; Hyun A. Ko; Kyu Yeon Shim; Seongho Kang; Hwayoung Kim; Dae Sik Kim; Junggeun Jhin; Dongjin Byun

doi:10.1063/5.0138850

Fabrication method of GaN template for high-speed chemical lift-off

Woo Seop Jeong, Min Joo Ahn, Hyun A. Ko, Kyu Yeon Shim, Seongho Kang, Hwayoung Kim, Dae Sik Kim, Junggeun Jhin, Dongjin Byun

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.

Original language	English
Article number	035316
Journal	AIP Advances
Volume	13
Issue number	3
DOIs	https://doi.org/10.1063/5.0138850
Publication status	Published - 2023 Mar 1

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Publisher Copyright:
© 2023 Author(s).

ASJC Scopus subject areas

General Physics and Astronomy

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Cite this

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title = "Fabrication method of GaN template for high-speed chemical lift-off",

abstract = "In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.",

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T1 - Fabrication method of GaN template for high-speed chemical lift-off

AU - Jeong, Woo Seop

AU - Ahn, Min Joo

AU - Ko, Hyun A.

AU - Shim, Kyu Yeon

AU - Kang, Seongho

AU - Kim, Hwayoung

AU - Kim, Dae Sik

AU - Jhin, Junggeun

AU - Byun, Dongjin

PY - 2023/3/1

Y1 - 2023/3/1

N2 - In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.

AB - In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.

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Fabrication method of GaN template for high-speed chemical lift-off

Abstract

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