Fabrication method of GaN template for high-speed chemical lift-off

Woo Seop Jeong; Min Joo Ahn; Hyun A. Ko; Kyu Yeon Shim; Seongho Kang; Hwayoung Kim; Dae Sik Kim; Junggeun Jhin; Dongjin Byun

doi:10.1063/5.0138850

Fabrication method of GaN template for high-speed chemical lift-off

Woo Seop Jeong, Min Joo Ahn, Hyun A. Ko, Kyu Yeon Shim, Seongho Kang, Hwayoung Kim, Dae Sik Kim, Junggeun Jhin, Dongjin Byun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.

Original language	English
Article number	035316
Journal	AIP Advances
Volume	13
Issue number	3
DOIs	https://doi.org/10.1063/5.0138850
Publication status	Published - 2023 Mar 1

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Publisher Copyright:
© 2023 Author(s).

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/5.0138850

Cite this

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title = "Fabrication method of GaN template for high-speed chemical lift-off",

abstract = "In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.",

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T1 - Fabrication method of GaN template for high-speed chemical lift-off

AU - Jeong, Woo Seop

AU - Ahn, Min Joo

AU - Ko, Hyun A.

AU - Shim, Kyu Yeon

AU - Kang, Seongho

AU - Kim, Hwayoung

AU - Kim, Dae Sik

AU - Jhin, Junggeun

AU - Byun, Dongjin

PY - 2023/3/1

Y1 - 2023/3/1

N2 - In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.

AB - In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of the grown GaN are investigated using x-ray diffraction, atomic force microscopy, and photoluminescence measurement. The GaN template with the air tunnel structure is depleted by CLO, and the peeling rate is found to be 2.3-6.45 times higher than that reported in the literature.

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Fabrication method of GaN template for high-speed chemical lift-off

Abstract

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