Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

T. G. Kim; C. S. Son; M. Ogura

doi:10.1109/68.920733

Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

T. G. Kim, C. S. Son, M. Ogura

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.

Original language	English
Pages (from-to)	409-411
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/68.920733
Publication status	Published - 2001 May
Externally published	Yes

Keywords

Distributed feedback (DFB) lasers
Gain-coupling
MOCVD
Quantum-wires
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.920733

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title = "Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step",

abstract = "AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.",

keywords = "Distributed feedback (DFB) lasers, Gain-coupling, MOCVD, Quantum-wires, Semiconductor lasers",

author = "Kim, {T. G.} and Son, {C. S.} and M. Ogura",

note = "Funding Information: Manuscript received July 6, 2000; revised January 9, 2001. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of the Femtosecond Technology Research Association (FESTA). The authors are with the Electrotechnical Laboratory (ETL), CREST-Japan Science and Technology Corporation (JST), Tsukuba, Ibaraki 305-8568, Japan. Publisher Item Identifier S 1041-1135(01)03764-8.",

year = "2001",

month = may,

doi = "10.1109/68.920733",

language = "English",

volume = "13",

pages = "409--411",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

AU - Kim, T. G.

AU - Son, C. S.

AU - Ogura, M.

N1 - Funding Information: Manuscript received July 6, 2000; revised January 9, 2001. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of the Femtosecond Technology Research Association (FESTA). The authors are with the Electrotechnical Laboratory (ETL), CREST-Japan Science and Technology Corporation (JST), Tsukuba, Ibaraki 305-8568, Japan. Publisher Item Identifier S 1041-1135(01)03764-8.

PY - 2001/5

Y1 - 2001/5

N2 - AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.

AB - AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.

KW - Distributed feedback (DFB) lasers

KW - Gain-coupling

KW - MOCVD

KW - Quantum-wires

KW - Semiconductor lasers

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U2 - 10.1109/68.920733

DO - 10.1109/68.920733

M3 - Article

AN - SCOPUS:0035333623

SN - 1041-1135

VL - 13

SP - 409

EP - 411

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

Abstract

Keywords

ASJC Scopus subject areas

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