Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

T. G. Kim, C. S. Son, M. Ogura

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.

Original languageEnglish
Pages (from-to)409-411
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number5
Publication statusPublished - 2001 May
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received July 6, 2000; revised January 9, 2001. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of the Femtosecond Technology Research Association (FESTA). The authors are with the Electrotechnical Laboratory (ETL), CREST-Japan Science and Technology Corporation (JST), Tsukuba, Ibaraki 305-8568, Japan. Publisher Item Identifier S 1041-1135(01)03764-8.


  • Distributed feedback (DFB) lasers
  • Gain-coupling
  • Quantum-wires
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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