Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties

Won Woo Chung; Gang Yeol Yoo; Hoo Keun Park; Woong Kim; Young Rag Do

doi:10.1109/NANO.2015.7388961

Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties

Won Woo Chung, Gang Yeol Yoo, Hoo Keun Park, Woong Kim, Young Rag Do

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In order to reduce the residual strain in multiple quantum wells (MQWs) with an InGaN/GaN heterostructure and enhance the light extraction efficiency of a gallium-nitride-based LED simultaneously, we fabricated a highly periodic multiple quantum well (MQW) nanorod array with an InGaN/GaN heterostructure capable of reducing the residual strain inside the GaN lattice and acting as a two-dimensional (2D) photonic crystal (PC) using polystyrene (PS) nanosphere lithography (NSL) followed by a reactive ion etching (RIE) process and an inductively coupled plasma-reactive ion etching (ICP-RIE) process. Each individual InGaN/GaN nanorod has a tapered shape from bottom to top with dimensions of 2 ∼ 2.5 μm (length) and 400 ∼ 600nm (diameter). Structural and morphological measurements were undertaken using a field-emission scanning electron microscope (FE-SEM), and the optical properties were measured by scanning-electron-microscope cathodoluminescence (SEM-CL) and photoluminescence (PL) instruments. The proposed InGaN/GaN MQW nanorod array demonstrated higher MQW intensity levels compared to non-processed bare GaN wafer in both the PL and the CL spectra due to the relaxation of residual strain and the increment of the extraction efficiency through the highly periodic 2D photonic crystal structure.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	216-219
Number of pages	4
ISBN (Print)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388961
Publication status	Published - 2016 Jan 20
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Other

Other	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15/7/27 → 15/7/30

Keywords

Cathodoluminescence
InGaN/GaN
Nanofabrication
Nanophotonics
Nanorod
Nanosphere Lithography
Photoluminescence
Wafer Scale Fabrication

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/NANO.2015.7388961

Cite this

Chung, W. W., Yoo, G. Y., Park, H. K., Kim, W., & Do, Y. R. (2016). Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 216-219). Article 7388961 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388961

Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties. / Chung, Won Woo; Yoo, Gang Yeol; Park, Hoo Keun et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2016. p. 216-219 7388961.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chung, WW, Yoo, GY, Park, HK, Kim, W & Do, YR 2016, Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388961, Institute of Electrical and Electronics Engineers Inc., pp. 216-219, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15/7/27. https://doi.org/10.1109/NANO.2015.7388961

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title = "Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties",

abstract = "In order to reduce the residual strain in multiple quantum wells (MQWs) with an InGaN/GaN heterostructure and enhance the light extraction efficiency of a gallium-nitride-based LED simultaneously, we fabricated a highly periodic multiple quantum well (MQW) nanorod array with an InGaN/GaN heterostructure capable of reducing the residual strain inside the GaN lattice and acting as a two-dimensional (2D) photonic crystal (PC) using polystyrene (PS) nanosphere lithography (NSL) followed by a reactive ion etching (RIE) process and an inductively coupled plasma-reactive ion etching (ICP-RIE) process. Each individual InGaN/GaN nanorod has a tapered shape from bottom to top with dimensions of 2 ∼ 2.5 μm (length) and 400 ∼ 600nm (diameter). Structural and morphological measurements were undertaken using a field-emission scanning electron microscope (FE-SEM), and the optical properties were measured by scanning-electron-microscope cathodoluminescence (SEM-CL) and photoluminescence (PL) instruments. The proposed InGaN/GaN MQW nanorod array demonstrated higher MQW intensity levels compared to non-processed bare GaN wafer in both the PL and the CL spectra due to the relaxation of residual strain and the increment of the extraction efficiency through the highly periodic 2D photonic crystal structure.",

keywords = "Cathodoluminescence, InGaN/GaN, Nanofabrication, Nanophotonics, Nanorod, Nanosphere Lithography, Photoluminescence, Wafer Scale Fabrication",

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AU - Chung, Won Woo

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AU - Kim, Woong

AU - Do, Young Rag

PY - 2016/1/20

Y1 - 2016/1/20

N2 - In order to reduce the residual strain in multiple quantum wells (MQWs) with an InGaN/GaN heterostructure and enhance the light extraction efficiency of a gallium-nitride-based LED simultaneously, we fabricated a highly periodic multiple quantum well (MQW) nanorod array with an InGaN/GaN heterostructure capable of reducing the residual strain inside the GaN lattice and acting as a two-dimensional (2D) photonic crystal (PC) using polystyrene (PS) nanosphere lithography (NSL) followed by a reactive ion etching (RIE) process and an inductively coupled plasma-reactive ion etching (ICP-RIE) process. Each individual InGaN/GaN nanorod has a tapered shape from bottom to top with dimensions of 2 ∼ 2.5 μm (length) and 400 ∼ 600nm (diameter). Structural and morphological measurements were undertaken using a field-emission scanning electron microscope (FE-SEM), and the optical properties were measured by scanning-electron-microscope cathodoluminescence (SEM-CL) and photoluminescence (PL) instruments. The proposed InGaN/GaN MQW nanorod array demonstrated higher MQW intensity levels compared to non-processed bare GaN wafer in both the PL and the CL spectra due to the relaxation of residual strain and the increment of the extraction efficiency through the highly periodic 2D photonic crystal structure.

AB - In order to reduce the residual strain in multiple quantum wells (MQWs) with an InGaN/GaN heterostructure and enhance the light extraction efficiency of a gallium-nitride-based LED simultaneously, we fabricated a highly periodic multiple quantum well (MQW) nanorod array with an InGaN/GaN heterostructure capable of reducing the residual strain inside the GaN lattice and acting as a two-dimensional (2D) photonic crystal (PC) using polystyrene (PS) nanosphere lithography (NSL) followed by a reactive ion etching (RIE) process and an inductively coupled plasma-reactive ion etching (ICP-RIE) process. Each individual InGaN/GaN nanorod has a tapered shape from bottom to top with dimensions of 2 ∼ 2.5 μm (length) and 400 ∼ 600nm (diameter). Structural and morphological measurements were undertaken using a field-emission scanning electron microscope (FE-SEM), and the optical properties were measured by scanning-electron-microscope cathodoluminescence (SEM-CL) and photoluminescence (PL) instruments. The proposed InGaN/GaN MQW nanorod array demonstrated higher MQW intensity levels compared to non-processed bare GaN wafer in both the PL and the CL spectra due to the relaxation of residual strain and the increment of the extraction efficiency through the highly periodic 2D photonic crystal structure.

KW - Cathodoluminescence

KW - InGaN/GaN

KW - Nanofabrication

KW - Nanophotonics

KW - Nanorod

KW - Nanosphere Lithography

KW - Photoluminescence

KW - Wafer Scale Fabrication

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BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

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T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties

Abstract

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