Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer

Sanjo Lee; Sunup Lee; D. Jeon; K. R. Lee; Byeong Kwon Ju; Myung Hwan Oh

doi:10.1116/1.589983

Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer

Sanjo Lee, Sunup Lee, D. Jeon, K. R. Lee, Byeong Kwon Ju, Myung Hwan Oh

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Coating silicon field emitter tips with a thin film of diamondlike carbon (DLC) seems to be a promising way to improve the performance of the silicon emitter tips. If one deposits a DLC film directly onto the gated silicon emitter, DLC will contaminate the side wall of the insulating layer, which can cause a large leakage current to the gate. To prevent the contamination of the side wall, we deposited an aluminum sacrificial layer before coating the DLC film. The gate current measured from the DLC-coated emitters using the sacrificial layer was less than 3% of the anode current.

Original language	English
Pages (from-to)	1203-1206
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.589983
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{3e9823e8ec334088b3c8a551ed913b47,

title = "Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer",

abstract = "Coating silicon field emitter tips with a thin film of diamondlike carbon (DLC) seems to be a promising way to improve the performance of the silicon emitter tips. If one deposits a DLC film directly onto the gated silicon emitter, DLC will contaminate the side wall of the insulating layer, which can cause a large leakage current to the gate. To prevent the contamination of the side wall, we deposited an aluminum sacrificial layer before coating the DLC film. The gate current measured from the DLC-coated emitters using the sacrificial layer was less than 3% of the anode current.",

author = "Sanjo Lee and Sunup Lee and D. Jeon and Lee, {K. R.} and Ju, {Byeong Kwon} and Oh, {Myung Hwan}",

year = "1998",

doi = "10.1116/1.589983",

language = "English",

volume = "16",

pages = "1203--1206",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer

AU - Lee, Sanjo

AU - Lee, Sunup

AU - Jeon, D.

AU - Lee, K. R.

AU - Ju, Byeong Kwon

AU - Oh, Myung Hwan

PY - 1998

Y1 - 1998

N2 - Coating silicon field emitter tips with a thin film of diamondlike carbon (DLC) seems to be a promising way to improve the performance of the silicon emitter tips. If one deposits a DLC film directly onto the gated silicon emitter, DLC will contaminate the side wall of the insulating layer, which can cause a large leakage current to the gate. To prevent the contamination of the side wall, we deposited an aluminum sacrificial layer before coating the DLC film. The gate current measured from the DLC-coated emitters using the sacrificial layer was less than 3% of the anode current.

AB - Coating silicon field emitter tips with a thin film of diamondlike carbon (DLC) seems to be a promising way to improve the performance of the silicon emitter tips. If one deposits a DLC film directly onto the gated silicon emitter, DLC will contaminate the side wall of the insulating layer, which can cause a large leakage current to the gate. To prevent the contamination of the side wall, we deposited an aluminum sacrificial layer before coating the DLC film. The gate current measured from the DLC-coated emitters using the sacrificial layer was less than 3% of the anode current.

UR - http://www.scopus.com/inward/record.url?scp=0342886878&partnerID=8YFLogxK

U2 - 10.1116/1.589983

DO - 10.1116/1.589983

M3 - Article

AN - SCOPUS:0342886878

SN - 1071-1023

VL - 16

SP - 1203

EP - 1206

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer

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