Fabrication of DLC-coated field emitter triode using aluminum parting layer

Sanjo Lee; Sunup Lee; D. Jeon; K. R. Lee; Byeong Kwon Ju; Myung Hwan Oh

Fabrication of DLC-coated field emitter triode using aluminum parting layer

Sanjo Lee, Sunup Lee, D. Jeon, K. R. Lee, Byeong Kwon Ju, Myung Hwan Oh

Research output: Contribution to conference › Paper › peer-review

Abstract

Coating silicon field emitter tips with a thin film of diamond-like carbon (DLC) seems to be a promising way to improve the performance of silicon emitter tips by enhancing the thermal conductivity and the hardness. If one deposits a DLC film onto the gated silicon emitter, DLC will be coated on the side wall of an insulating layer to increase the leakage current to the gate. Using an aluminum sacrificial layer on the side wall of an insulating layer before coating DLC film, we could coat a DLC film on the tips without contaminating the side wall. I-V measurement of the DLC-coated silicon triode showed that the leakage current to the gate was 2.6% of the anode current.

Original language	English
Pages	381-384
Number of pages	4
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 1997 Aug 17 → 1997 Aug 21

Other

Other	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
City	Kyongju, Korea
Period	97/8/17 → 97/8/21

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

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title = "Fabrication of DLC-coated field emitter triode using aluminum parting layer",

abstract = "Coating silicon field emitter tips with a thin film of diamond-like carbon (DLC) seems to be a promising way to improve the performance of silicon emitter tips by enhancing the thermal conductivity and the hardness. If one deposits a DLC film onto the gated silicon emitter, DLC will be coated on the side wall of an insulating layer to increase the leakage current to the gate. Using an aluminum sacrificial layer on the side wall of an insulating layer before coating DLC film, we could coat a DLC film on the tips without contaminating the side wall. I-V measurement of the DLC-coated silicon triode showed that the leakage current to the gate was 2.6% of the anode current.",

author = "Sanjo Lee and Sunup Lee and D. Jeon and Lee, {K. R.} and Ju, {Byeong Kwon} and Oh, {Myung Hwan}",

year = "1997",

language = "English",

pages = "381--384",

note = "Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 ; Conference date: 17-08-1997 Through 21-08-1997",

}

TY - CONF

T1 - Fabrication of DLC-coated field emitter triode using aluminum parting layer

AU - Lee, Sanjo

AU - Lee, Sunup

AU - Jeon, D.

AU - Lee, K. R.

AU - Ju, Byeong Kwon

AU - Oh, Myung Hwan

PY - 1997

Y1 - 1997

N2 - Coating silicon field emitter tips with a thin film of diamond-like carbon (DLC) seems to be a promising way to improve the performance of silicon emitter tips by enhancing the thermal conductivity and the hardness. If one deposits a DLC film onto the gated silicon emitter, DLC will be coated on the side wall of an insulating layer to increase the leakage current to the gate. Using an aluminum sacrificial layer on the side wall of an insulating layer before coating DLC film, we could coat a DLC film on the tips without contaminating the side wall. I-V measurement of the DLC-coated silicon triode showed that the leakage current to the gate was 2.6% of the anode current.

AB - Coating silicon field emitter tips with a thin film of diamond-like carbon (DLC) seems to be a promising way to improve the performance of silicon emitter tips by enhancing the thermal conductivity and the hardness. If one deposits a DLC film onto the gated silicon emitter, DLC will be coated on the side wall of an insulating layer to increase the leakage current to the gate. Using an aluminum sacrificial layer on the side wall of an insulating layer before coating DLC film, we could coat a DLC film on the tips without contaminating the side wall. I-V measurement of the DLC-coated silicon triode showed that the leakage current to the gate was 2.6% of the anode current.

UR - http://www.scopus.com/inward/record.url?scp=0031336643&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031336643&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031336643

SP - 381

EP - 384

T2 - Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97

Y2 - 17 August 1997 through 21 August 1997

ER -

Fabrication of DLC-coated field emitter triode using aluminum parting layer

Abstract

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ASJC Scopus subject areas

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