Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001)

H. M. Hwang, S. W. Shin, J. H. Kang, J. Lee, J. H. Lee, J. H. Song, J. Y. Choi, H. H. Lee, H. S. Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Isolated epitaxial Co(5 nm ≤ tCo ≤ 30 nm)/Cu nanostructures have been fabricated on a Si(001) substrate by using a nanoporous anodic aluminum-oxide (AAO) film as a mask during evaporation. The structural and the magnetic properties of the nanostructures are compared with those of as-grown films. The results of X-ray diffraction confirm that both the film and the nanostructure have a fee structure with a (001) surface and a Co[110]//Cu[110]//Si[001] crystallographic relation in the plane. The nanostructures with tCo ≥ 10 nm show clear four-fold symmetry of the remanent magnetization in the plane, but due to dipole interactions among nanodots, their values are smaller than those of films. The nanostructure with tCo = 5 nm shows isotropic hysteresis loops while the film with the same thickness shows a four-fold symmetry.

Original languageEnglish
Pages (from-to)1016-1019
Number of pages4
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2006 Sept


  • Anisotropy
  • Epitaxial
  • Nanostructures

ASJC Scopus subject areas

  • General Physics and Astronomy


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