Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

Young Ho Do, Min Gyu Kang, Jin Sang Kim, Chong Yun Kang, Seok Jin Yoon

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5Nb 0.5)O 3-0.95Pb(Zr 0.52Ti 0.48)O 3 + 0.7 wt.%Nb 2O 5 + 0.5 wt.%MnO 2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.

Original languageEnglish
Pages (from-to)124-127
Number of pages4
JournalSensors and Actuators, A: Physical
Publication statusPublished - 2012 Sept

Bibliographical note

Funding Information:
This research was supported by the Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2011-0000001 ) and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731).


  • Ferroelectric properties
  • Films process
  • Functional applications
  • Laser lift-off
  • PZT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


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