Abstract
The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5Nb 0.5)O 3-0.95Pb(Zr 0.52Ti 0.48)O 3 + 0.7 wt.%Nb 2O 5 + 0.5 wt.%MnO 2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.
Original language | English |
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Pages (from-to) | 124-127 |
Number of pages | 4 |
Journal | Sensors and Actuators, A: Physical |
Volume | 184 |
DOIs | |
Publication status | Published - 2012 Sept |
Bibliographical note
Funding Information:This research was supported by the Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2011-0000001 ) and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731).
Keywords
- Ferroelectric properties
- Films process
- Functional applications
- Laser lift-off
- PZT
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering