Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

T. G. Kim; C. S. Son; S. M. Hwang; E. K. Kim; S. K. Min; S. J. Leem; J. H. Park

doi:10.1049/el:19980084

Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

T. G. Kim, C. S. Son, S. M. Hwang, E. K. Kim, S. K. Min, S. J. Leem, J. H. Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.

Original language	English
Pages (from-to)	85-87
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1049/el:19980084
Publication status	Published - 1998 Jan 8

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19980084

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@article{a7787ab1c2484946ab1bf0ce8745c85e,

title = "Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition",

abstract = "GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.",

author = "Kim, {T. G.} and Son, {C. S.} and Hwang, {S. M.} and Kim, {E. K.} and Min, {S. K.} and Leem, {S. J.} and Park, {J. H.}",

year = "1998",

month = jan,

day = "8",

doi = "10.1049/el:19980084",

language = "English",

volume = "34",

pages = "85--87",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

AU - Kim, T. G.

AU - Son, C. S.

AU - Hwang, S. M.

AU - Kim, E. K.

AU - Min, S. K.

AU - Leem, S. J.

AU - Park, J. H.

PY - 1998/1/8

Y1 - 1998/1/8

N2 - GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.

AB - GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.

UR - http://www.scopus.com/inward/record.url?scp=0032495448&partnerID=8YFLogxK

U2 - 10.1049/el:19980084

DO - 10.1049/el:19980084

M3 - Article

AN - SCOPUS:0032495448

SN - 0013-5194

VL - 34

SP - 85

EP - 87

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

Abstract

ASJC Scopus subject areas

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