Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography

Heon Lee; Sung Hoon Hong; Ki Yeon Yang; Gun Young Jung

doi:10.1016/j.mee.2006.11.009

Fabrication of Ge₂Sb₂Te₅ based PRAM device at 60 nm scale by using UV nanoimprint lithography

Heon Lee
, Sung Hoon Hong
, Ki Yeon Yang
, Gun Young Jung^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge₂Sb₂Te₅ were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.

Original language	English
Pages (from-to)	573-576
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	4
DOIs	https://doi.org/10.1016/j.mee.2006.11.009
Publication status	Published - 2007 Apr

Bibliographical note

Funding Information:
This study was supported by Consortium of Semiconductor Advanced Research Program and by a Grant from Center for Nano-scale Mechatronics and Manufacturing, one of the 21st Century Frontier Research Programs, which were supported by the Ministry of Science and Technology, Korea.

Keywords

Chalcogenide
Lift-off
Nanoimprint lithography
Phase change memory
Phase transition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2006.11.009

Cite this

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title = "Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography",

abstract = "Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.",

keywords = "Chalcogenide, Lift-off, Nanoimprint lithography, Phase change memory, Phase transition",

author = "Heon Lee and Hong, \{Sung Hoon\} and Yang, \{Ki Yeon\} and Jung, \{Gun Young\}",

note = "Funding Information: This study was supported by Consortium of Semiconductor Advanced Research Program and by a Grant from Center for Nano-scale Mechatronics and Manufacturing, one of the 21st Century Frontier Research Programs, which were supported by the Ministry of Science and Technology, Korea.",

year = "2007",

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doi = "10.1016/j.mee.2006.11.009",

language = "English",

volume = "84",

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journal = "Microelectronic Engineering",

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AU - Lee, Heon

AU - Hong, Sung Hoon

AU - Yang, Ki Yeon

AU - Jung, Gun Young

N1 - Funding Information: This study was supported by Consortium of Semiconductor Advanced Research Program and by a Grant from Center for Nano-scale Mechatronics and Manufacturing, one of the 21st Century Frontier Research Programs, which were supported by the Ministry of Science and Technology, Korea.

PY - 2007/4

Y1 - 2007/4

N2 - Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.

AB - Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.

KW - Chalcogenide

KW - Lift-off

KW - Nanoimprint lithography

KW - Phase change memory

KW - Phase transition

UR - https://www.scopus.com/pages/publications/33847631255

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DO - 10.1016/j.mee.2006.11.009

M3 - Article

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