TY - JOUR
T1 - Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template
AU - Hong, Sung Hoon
AU - Bae, Byeong Ju
AU - Lee, Heon
AU - Jeong, Jun Ho
N1 - Funding Information:
This work is supported by the Next-generation growth engine project of the Korea Ministry of Commerce, Industry and Energy , and a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing, which is one of the 21st Century Frontier Research Programs, which are supported by the Ministry of Education, Science, and Technology, Korea.
PY - 2010/11
Y1 - 2010/11
N2 - In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.
AB - In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.
KW - Anodic alumina oxide (AAO) template
KW - Conducting AFM
KW - Nano-pillar device
KW - Nanoimprint lithography
KW - Phase change memory (PRAM)
UR - http://www.scopus.com/inward/record.url?scp=77955510327&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2010.01.001
DO - 10.1016/j.mee.2010.01.001
M3 - Article
AN - SCOPUS:77955510327
SN - 0167-9317
VL - 87
SP - 2081
EP - 2084
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 11
ER -