In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.
Bibliographical noteFunding Information:
This work is supported by the Next-generation growth engine project of the Korea Ministry of Commerce, Industry and Energy , and a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing, which is one of the 21st Century Frontier Research Programs, which are supported by the Ministry of Education, Science, and Technology, Korea.
- Anodic alumina oxide (AAO) template
- Conducting AFM
- Nano-pillar device
- Nanoimprint lithography
- Phase change memory (PRAM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering