Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template

Sung Hoon Hong; Byeong Ju Bae; Heon Lee; Jun Ho Jeong

doi:10.1016/j.mee.2010.01.001

Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template

Sung Hoon Hong, Byeong Ju Bae, Heon Lee, Jun Ho Jeong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge₂Sb₂Te₅ patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.

Original language	English
Pages (from-to)	2081-2084
Number of pages	4
Journal	Microelectronic Engineering
Volume	87
Issue number	11
DOIs	https://doi.org/10.1016/j.mee.2010.01.001
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
This work is supported by the Next-generation growth engine project of the Korea Ministry of Commerce, Industry and Energy , and a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing, which is one of the 21st Century Frontier Research Programs, which are supported by the Ministry of Education, Science, and Technology, Korea.

Keywords

Anodic alumina oxide (AAO) template
Conducting AFM
Nano-pillar device
Nanoimprint lithography
Phase change memory (PRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2010.01.001

Cite this

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title = "Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template",

abstract = "In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.",

keywords = "Anodic alumina oxide (AAO) template, Conducting AFM, Nano-pillar device, Nanoimprint lithography, Phase change memory (PRAM)",

author = "Hong, {Sung Hoon} and Bae, {Byeong Ju} and Heon Lee and Jeong, {Jun Ho}",

note = "Funding Information: This work is supported by the Next-generation growth engine project of the Korea Ministry of Commerce, Industry and Energy , and a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing, which is one of the 21st Century Frontier Research Programs, which are supported by the Ministry of Education, Science, and Technology, Korea.",

year = "2010",

month = nov,

doi = "10.1016/j.mee.2010.01.001",

language = "English",

volume = "87",

pages = "2081--2084",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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T1 - Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template

AU - Hong, Sung Hoon

AU - Bae, Byeong Ju

AU - Lee, Heon

AU - Jeong, Jun Ho

N1 - Funding Information: This work is supported by the Next-generation growth engine project of the Korea Ministry of Commerce, Industry and Energy , and a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing, which is one of the 21st Century Frontier Research Programs, which are supported by the Ministry of Education, Science, and Technology, Korea.

PY - 2010/11

Y1 - 2010/11

N2 - In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.

AB - In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.

KW - Anodic alumina oxide (AAO) template

KW - Conducting AFM

KW - Nano-pillar device

KW - Nanoimprint lithography

KW - Phase change memory (PRAM)

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U2 - 10.1016/j.mee.2010.01.001

DO - 10.1016/j.mee.2010.01.001

M3 - Article

AN - SCOPUS:77955510327

SN - 0167-9317

VL - 87

SP - 2081

EP - 2084

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 11

ER -

Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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