We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO2 and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO2 layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO2 layers.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering