Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer

Hwan Hee Jeong; Sang Youl Lee; June O. Song; Kwang Ki Choi; Seok Hun Lee; Hee Seok Choi; Tchang Hun Oh; Yong Hyun Lee; Tae Yeon Seong

doi:10.1149/1.3152334

Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer

Hwan Hee Jeong, Sang Youl Lee, June O. Song, Kwang Ki Choi, Seok Hun Lee, Hee Seok Choi, Tchang Hun Oh, Yong Hyun Lee, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO₂ and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO₂ layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO₂ layers.

Original language	English
Pages (from-to)	H322-H324
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1149/1.3152334
Publication status	Published - 2009

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer",

abstract = "We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO2 and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO2 layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO2 layers.",

author = "Jeong, {Hwan Hee} and Lee, {Sang Youl} and Song, {June O.} and Choi, {Kwang Ki} and Lee, {Seok Hun} and Choi, {Hee Seok} and Oh, {Tchang Hun} and Lee, {Yong Hyun} and Seong, {Tae Yeon}",

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doi = "10.1149/1.3152334",

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T1 - Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer

AU - Jeong, Hwan Hee

AU - Lee, Sang Youl

AU - Song, June O.

AU - Choi, Kwang Ki

AU - Lee, Seok Hun

AU - Choi, Hee Seok

AU - Oh, Tchang Hun

AU - Lee, Yong Hyun

AU - Seong, Tae Yeon

PY - 2009

Y1 - 2009

N2 - We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO2 and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO2 layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO2 layers.

AB - We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO2 and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO2 layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO2 layers.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer

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