Abstract
Nanostructures composed of Ag clusters on an Sb-terminated Si surface were designed in a highly controlled manner and the electric conduction through Ag nanoclusters to the silicon substrate was investigated by using a scanning tunneling microscopy/spectroscopy. It was found that the lateral conduction between neighboring Ag clusters significantly contributed to the tunneling current-voltage characteristics, and the metallic single-electron tunneling structures employing the lateral conduction channels at room temperature can be fabricated via a field-induced manipulation of Ag clusters.
Original language | English |
---|---|
Pages (from-to) | 139-141 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1999 Jul 5 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)