Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process

Sun Il Shim; Young Suk Kwon; Seong Il Kim; Yong Tae Kim; Jung Ho Park

doi:10.1002/pssa.200409051

Fabrication of MFISFETs with Pt/SrBi₂Ta₂O ₉/Y₂O₃Si gate structure by developing an etch-stop process

Sun Il Shim, Young Suk Kwon, Seong Il Kim, Yong Tae Kim, Jung Ho Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi₂Ta₂O₉ (SBT) and Y ₂O₃. Depending on the selectivity with various Ar/Cl ₂ gas mixture, we could find the acceptable thickness of Y ₂O₃ for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.

Original language	English
Pages (from-to)	R65-R68
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	10
DOIs	https://doi.org/10.1002/pssa.200409051
Publication status	Published - 2004 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssa.200409051

Cite this

@article{e2d5ddadca3e4d26965b43fbdc1ba82a,

title = "Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process",

abstract = "A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y 2O3. Depending on the selectivity with various Ar/Cl 2 gas mixture, we could find the acceptable thickness of Y 2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.",

author = "Shim, {Sun Il} and Kwon, {Young Suk} and Kim, {Seong Il} and Kim, {Yong Tae} and Park, {Jung Ho}",

year = "2004",

month = aug,

doi = "10.1002/pssa.200409051",

language = "English",

volume = "201",

pages = "R65--R68",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "10",

}

TY - JOUR

T1 - Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process

AU - Shim, Sun Il

AU - Kwon, Young Suk

AU - Kim, Seong Il

AU - Kim, Yong Tae

AU - Park, Jung Ho

PY - 2004/8

Y1 - 2004/8

N2 - A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y 2O3. Depending on the selectivity with various Ar/Cl 2 gas mixture, we could find the acceptable thickness of Y 2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.

AB - A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y 2O3. Depending on the selectivity with various Ar/Cl 2 gas mixture, we could find the acceptable thickness of Y 2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.

UR - http://www.scopus.com/inward/record.url?scp=4444333435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444333435&partnerID=8YFLogxK

U2 - 10.1002/pssa.200409051

DO - 10.1002/pssa.200409051

M3 - Article

AN - SCOPUS:4444333435

SN - 0031-8965

VL - 201

SP - R65-R68

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 10

ER -

Fabrication of MFISFETs with Pt/SrBi₂Ta₂O ₉/Y₂O₃Si gate structure by developing an etch-stop process

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this