Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Eun Ju Hong; Kyeong Jae Byeon; Hyoungwon Park; Jaeyeon Hwang; Heon Lee; Kyungwoo Choi; Gun Young Jung

doi:10.1016/j.mseb.2009.05.018

Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Eun Ju Hong, Kyeong Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Gun Young Jung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

Original language	English
Pages (from-to)	170-173
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	163
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2009.05.018
Publication status	Published - 2009 Jul 25

Bibliographical note

Funding Information:
This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

Keywords

GaN
Green LED
Moth-eye structure
Nanoimprint lithography
Photoluminescence
Photon extraction efficiency

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2009.05.018

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title = "Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction",

abstract = "Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.",

keywords = "GaN, Green LED, Moth-eye structure, Nanoimprint lithography, Photoluminescence, Photon extraction efficiency",

author = "Hong, {Eun Ju} and Byeon, {Kyeong Jae} and Hyoungwon Park and Jaeyeon Hwang and Heon Lee and Kyungwoo Choi and Jung, {Gun Young}",

note = "Funding Information: This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).",

year = "2009",

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doi = "10.1016/j.mseb.2009.05.018",

language = "English",

volume = "163",

pages = "170--173",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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T1 - Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

AU - Hong, Eun Ju

AU - Byeon, Kyeong Jae

AU - Park, Hyoungwon

AU - Hwang, Jaeyeon

AU - Lee, Heon

AU - Choi, Kyungwoo

AU - Jung, Gun Young

N1 - Funding Information: This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

PY - 2009/7/25

Y1 - 2009/7/25

N2 - Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

AB - Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

KW - GaN

KW - Green LED

KW - Moth-eye structure

KW - Nanoimprint lithography

KW - Photoluminescence

KW - Photon extraction efficiency

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DO - 10.1016/j.mseb.2009.05.018

M3 - Article

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SN - 0921-5107

VL - 163

SP - 170

EP - 173

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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