Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Eun Ju Hong; Kyeong Jae Byeon; Hyoungwon Park; Jaeyeon Hwang; Heon Lee; Kyungwoo Choi; Gun Young Jung

doi:10.1016/j.mseb.2009.05.018

Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Eun Ju Hong, Kyeong Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Gun Young Jung

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

Original language	English
Pages (from-to)	170-173
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	163
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2009.05.018
Publication status	Published - 2009 Jul 25

Bibliographical note

Funding Information:
This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

Keywords

GaN
Green LED
Moth-eye structure
Nanoimprint lithography
Photoluminescence
Photon extraction efficiency

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2009.05.018

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title = "Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction",

abstract = "Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.",

keywords = "GaN, Green LED, Moth-eye structure, Nanoimprint lithography, Photoluminescence, Photon extraction efficiency",

author = "Hong, {Eun Ju} and Byeon, {Kyeong Jae} and Hyoungwon Park and Jaeyeon Hwang and Heon Lee and Kyungwoo Choi and Jung, {Gun Young}",

note = "Funding Information: This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).",

year = "2009",

month = jul,

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doi = "10.1016/j.mseb.2009.05.018",

language = "English",

volume = "163",

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journal = "Materials Science and Engineering: B",

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T1 - Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

AU - Hong, Eun Ju

AU - Byeon, Kyeong Jae

AU - Park, Hyoungwon

AU - Hwang, Jaeyeon

AU - Lee, Heon

AU - Choi, Kyungwoo

AU - Jung, Gun Young

N1 - Funding Information: This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

PY - 2009/7/25

Y1 - 2009/7/25

N2 - Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

AB - Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

KW - GaN

KW - Green LED

KW - Moth-eye structure

KW - Nanoimprint lithography

KW - Photoluminescence

KW - Photon extraction efficiency

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U2 - 10.1016/j.mseb.2009.05.018

DO - 10.1016/j.mseb.2009.05.018

M3 - Article

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SN - 0921-5107

VL - 163

SP - 170

EP - 173

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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