Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

Eun Ju Hong, Kyeong Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Gun Young Jung

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number3
Publication statusPublished - 2009 Jul 25

Bibliographical note

Funding Information:
This work is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).


  • GaN
  • Green LED
  • Moth-eye structure
  • Nanoimprint lithography
  • Photoluminescence
  • Photon extraction efficiency

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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