Keyphrases
GaN-based Light-emitting Diodes
100%
GaN Layers
100%
P-GaN
100%
Light Extraction
100%
Moth-eye Structure
100%
Light-emitting Diodes
42%
Cladding Layer
14%
Photoluminescence
14%
Indium Gallium Nitride (InGaN)
14%
Multiple Quantum Wells
14%
Plasma Etching Process
14%
Light-emitting Diode Device
14%
Light Extraction Efficiency
14%
GaN-based
14%
Transmittance
14%
Inductively Coupled Plasma Etching
14%
Inductively Coupled Plasma
14%
Green Light-emitting Diodes
14%
Etching Time
14%
UV Imprinting
14%
Mask Layer
14%
Cr Mask
14%
Engineering
Light-Emitting Diode
100%
Light Extraction
100%
Inductively Coupled Plasma
33%
Cladding Layer
16%
Quantum Well
16%
Light Extraction Efficiency
16%
Material Science
Light-Emitting Diode
100%
Quantum Well
16%
Photoluminescence
16%
Plasma Etching
16%