Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure

Sung Hoon Hong; Heon Lee; Yunjung Choi; Young Kook Lee

doi:10.1016/j.cap.2011.06.018

Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure

Sung Hoon Hong, Heon Lee, Yunjung Choi, Young Kook Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.

Original language	English
Pages (from-to)	S16-S20
Journal	Current Applied Physics
Volume	11
Issue number	5 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2011.06.018
Publication status	Published - 2011 Sept

Bibliographical note

Funding Information:
This work is financially supported by Samsung Electronics and the Korean Ministry of Knowledge and Economy (MKE) under the National Research Project of Phase-Change Random Access Memory Development.

Keywords

Conductive AFM
InSe
InSe/GeSbTe
Multi-level switching
Nanoimprint lithography

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2011.06.018

Cite this

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title = "Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure",

abstract = "The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.",

keywords = "Conductive AFM, InSe, InSe/GeSbTe, Multi-level switching, Nanoimprint lithography",

author = "Hong, {Sung Hoon} and Heon Lee and Yunjung Choi and Lee, {Young Kook}",

note = "Funding Information: This work is financially supported by Samsung Electronics and the Korean Ministry of Knowledge and Economy (MKE) under the National Research Project of Phase-Change Random Access Memory Development.",

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AU - Hong, Sung Hoon

AU - Lee, Heon

AU - Choi, Yunjung

AU - Lee, Young Kook

N1 - Funding Information: This work is financially supported by Samsung Electronics and the Korean Ministry of Knowledge and Economy (MKE) under the National Research Project of Phase-Change Random Access Memory Development.

PY - 2011/9

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N2 - The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.

AB - The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.

KW - Conductive AFM

KW - InSe

KW - InSe/GeSbTe

KW - Multi-level switching

KW - Nanoimprint lithography

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ER -

Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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